Invention Application
- Patent Title: MEMORY DEVICE WITH REDUCED-RESISTANCE INTERCONNECT
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Application No.: US15384373Application Date: 2016-12-20
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Publication No.: US20170186750A1Publication Date: 2017-06-29
- Inventor: Sahil Preet Singh , Yen-Huei Chen , Avinash Chander
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: H01L27/105
- IPC: H01L27/105 ; H01L21/768 ; G11C5/02 ; G11C5/06 ; H01L23/528 ; H01L23/522

Abstract:
An interconnect structure includes a lower interconnect layer, an intermediate interconnect layer, and an upper interconnect layer. First and second conductive lines in the lower interconnect layer extend generally in a first direction over a memory array region, and additional lower conductive lines in the lower interconnect layer extend generally in the first direction over a peripheral region. A first plurality of conductive line segments in the intermediate interconnect layer extend generally in the first direction over the memory array region, and additional intermediate conductive line segments in the intermediate interconnect layer extend generally in a second, perpendicular direction over the peripheral region. A second plurality of conductive line segments in the upper interconnect layer extend generally in the first direction over the memory array region, and additional upper conductive line segments in the upper interconnect layer extend generally in the first direction over the peripheral region.
Public/Granted literature
- US10134737B2 Memory device with reduced-resistance interconnect Public/Granted day:2018-11-20
Information query
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