- 专利标题： ENHANCEMENT OF SPIN TRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE USING HYDROGEN PLASMA
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申请号： US14982986申请日： 2015-12-29
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公开(公告)号： US20170186944A1公开(公告)日： 2017-06-29
- 发明人: Anthony J. Annunziata , Gen P. Lauer , JungHyuk Lee , Jeong-Heon Park , Daniel C. Worledge
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , SAMSUNG ELECTRONICS CO., LTD.
- 主分类号： H01L43/08
- IPC分类号： H01L43/08 ; H01L43/02 ; H01L43/12
摘要：
A method of making a MRAM device includes forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a reference layer positioned in contact with the electrode, a tunnel barrier layer arranged on the reference layer, and a free layer arranged on the tunnel barrier layer; and depositing an encapsulating layer on and along sidewalls of the magnetic tunnel junction; wherein the exposing of the magnetic tunnel junction to hydrogen plasma is performed at a temperature from about 150 to about 250° C. An MRAM device including an encapsulating layer comprising either silicon nitride or aluminum oxide is also provided.
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