Invention Application
- Patent Title: III-Nitride Nanowire LED with Strain Modified Surface Active Region and Method of Making Thereof
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Application No.: US15502758Application Date: 2015-08-07
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Publication No.: US20170236975A1Publication Date: 2017-08-17
- Inventor: Linda ROMANO , Ping WANG
- Applicant: GLO AB
- International Application: PCT/US2015/044245 WO 20150807
- Main IPC: H01L33/24
- IPC: H01L33/24 ; H01L33/32 ; H01L33/00 ; H01L33/08 ; H01L33/12 ; H01L33/42 ; H01L33/06 ; H01L33/02
Abstract:
A core-shell nanowire device includes an eave region having a structural discontinuity from the p-plane in the upper tip portion of the shell to the m-plane in the lower portion of the shell. The eave region has at least 5 atomic percent higher indium content than the p-plane and m-plane portions of the shell.
Public/Granted literature
- US09882086B2 III-nitride nanowire LED with strain modified surface active region and method of making thereof Public/Granted day:2018-01-30
Information query
IPC分类:
