Invention Application
- Patent Title: Semiconductor Devices and Methods for Forming a Semiconductor Device
-
Application No.: US15434208Application Date: 2017-02-16
-
Publication No.: US20170243940A1Publication Date: 2017-08-24
- Inventor: Gerhard Schmidt , Erwin Lercher
- Applicant: Infineon Technologies AG
- Priority: DE102016102861.4 20160218
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/40 ; H01L21/762 ; H01L21/266 ; H01L29/66 ; H01L21/225 ; H01L29/423 ; H01L29/78 ; H01L29/739 ; H01L29/06 ; H01L21/761
Abstract:
A method for forming a semiconductor device includes incorporating dopants of a first conductivity type into a nearby body region portion of a semiconductor substrate having a base doping of the first conductivity type. The incorporation of the dopants of the first conductivity type is masked by a mask structure at at least part of an edge region of the semiconductor substrate. The method further includes forming a body region of a transistor structure of a second conductivity type in the semiconductor substrate. The nearby body region portion of the semiconductor substrate is located adjacent to the body region of the transistor structure.
Public/Granted literature
- US10079281B2 Semiconductor devices and methods for forming a semiconductor device Public/Granted day:2018-09-18
Information query
IPC分类:
