Invention Application
- Patent Title: SEMICONDUCTOR DEVICE WITH BURIED CONDUCTIVE REGION, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
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Application No.: US15250638Application Date: 2016-08-29
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Publication No.: US20170250253A1Publication Date: 2017-08-31
- Inventor: Fabrizio Fausto Renzo Toia , Claudio Contiero , Elisabetta Pizzi , Simone Dario Mariani
- Applicant: STMICROELECTRONICS S.R.L.
- Priority: IT102016000019688 20160225
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/40 ; H01L29/78

Abstract:
A semiconductor device comprising: a semiconductor body including an active region that houses an electronic component and a passive dielectric region surrounding the active region; a conductive buried region, of metallic material or metallic alloy, which extends in the semiconductor body in the active region; and one or more electrical contacts, of metallic material, which extend between the conductive buried region and a top surface of the semiconductor body, and form respective paths for electrical access to the conductive buried region.
Public/Granted literature
- US10062757B2 Semiconductor device with buried metallic region, and method for manufacturing the semiconductor device Public/Granted day:2018-08-28
Information query
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