公开(公告)号：US10062757B2

公开(公告)日：2018-08-28

申请号：US15250638

申请日：2016-08-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Fabrizio Fausto Renzo Toia ,  Claudio Contiero ,  Elisabetta Pizzi ,  Simone Dario Mariani

IPC: H01L23/58 ,  H01L29/10 ,  H01L29/78 ,  H01L29/40 ,  H01L21/02 ,  H01L21/324 ,  H01L23/535 ,  H01L21/74

CPC classification number: H01L29/1087 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/3247 ,  H01L21/74 ,  H01L21/743 ,  H01L23/535 ,  H01L29/1083 ,  H01L29/401 ,  H01L29/7802

Abstract: A semiconductor device includes: a semiconductor body including an active region that houses an electronic component and a passive dielectric region surrounding the active region; a conductive buried region, of metallic material or metallic alloy, which extends in the semiconductor body in the active region; and one or more electrical contacts, of metallic material, which extend between the conductive buried region and a top surface of the semiconductor body, and form respective paths for electrical access to the conductive buried region.

公开(公告)号：US20170250253A1

公开(公告)日：2017-08-31

申请号：US15250638

申请日：2016-08-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Fabrizio Fausto Renzo Toia ,  Claudio Contiero ,  Elisabetta Pizzi ,  Simone Dario Mariani

IPC: H01L29/10 ,  H01L29/40 ,  H01L29/78

CPC classification number: H01L29/1087 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/3247 ,  H01L21/74 ,  H01L21/743 ,  H01L23/535 ,  H01L29/1083 ,  H01L29/401 ,  H01L29/7802

Abstract: A semiconductor device comprising: a semiconductor body including an active region that houses an electronic component and a passive dielectric region surrounding the active region; a conductive buried region, of metallic material or metallic alloy, which extends in the semiconductor body in the active region; and one or more electrical contacts, of metallic material, which extend between the conductive buried region and a top surface of the semiconductor body, and form respective paths for electrical access to the conductive buried region.