- 专利标题: ION IMPLANTATION APPARATUS AND SCANNING WAVEFORM PREPARATION METHOD
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申请号: US15457698申请日: 2017-03-13
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公开(公告)号: US20170271128A1公开(公告)日: 2017-09-21
- 发明人: Shiro Ninomiya , Akihiro Ochi
- 申请人: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
- 优先权: JP2016-055824 20160318
- 主分类号: H01J37/317
- IPC分类号: H01J37/317 ; H01J37/147 ; H01J37/244 ; H01J37/08
摘要:
An ion implantation apparatus includes a beam scanner that provides reciprocating beam scanning in a beam scanning direction, a beam measurer that measures a beam current intensity distribution in the beam scanning direction at a downstream of the beam scanner, and a controller. The controller includes a scanning waveform preparing unit that determines whether or not a measured beam current intensity distribution measured by the beam measurer with use of a given scanning waveform fits a target non-uniform dose amount distribution, and that, in a case of fitting, correlates the given scanning waveform with the target non-uniform dose amount distribution.
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