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公开(公告)号：US20180068829A1
公开(公告)日：2018-03-08
申请号：US15695857
申请日：2017-09-05
IPC分类号： H01J37/304 , H01J37/30 , H01L21/265 , H01J37/317
CPC分类号： H01J37/304 , H01J37/3002 , H01J37/3171 , H01J2237/24514 , H01J2237/30455 , H01J2237/30477 , H01J2237/30488 , H01J2237/31701 , H01L21/265
摘要： An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.
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公开(公告)号：US10217607B2
公开(公告)日：2019-02-26
申请号：US15695857
申请日：2017-09-05
IPC分类号： H01J37/30 , H01J37/304 , H01J37/317 , H01L21/265
摘要： An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.
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公开(公告)号：US20180286637A1
公开(公告)日：2018-10-04
申请号：US15937346
申请日：2018-03-27
发明人： Syuta Ochi , Shiro Ninomiya , Yuuji Takahashi , Tadanobu Kagawa
IPC分类号： H01J37/32 , H01L21/223
CPC分类号： H01J37/32412 , H01J37/3171 , H01J37/3233 , H01J37/32422 , H01L21/2236
摘要： An ion implanter includes a plasma shower device configured to supply electrons to an ion beam with which a wafer is irradiated. The plasma shower device includes a plasma generating chamber provided with an extraction opening, a first electrode which is provided with an opening communicating with the extraction opening and to which a first voltage is applied with respect to an electric potential of the plasma generating chamber, a second electrode which is disposed at a position facing the first electrode such that the ion beam is interposed between the first and second electrodes and to which a second voltage is applied with respect to the electric potential of the plasma generating chamber, and a controller configured to independently control the first voltage and the second voltage to switch operation modes of the plasma shower device.
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公开(公告)号：US09984856B2
公开(公告)日：2018-05-29
申请号：US15280604
申请日：2016-09-29
发明人： Shiro Ninomiya , Yasuharu Okamoto , Akihiro Ochi , Yusuke Ueno
IPC分类号： A61N5/00 , H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01L21/26586
摘要： An ion implantation apparatus performs a plurality of ion implantation processes having different implantation conditions to a same wafer successively. The plurality of ion implantation processes are: (a) provided so that twist angles of the wafer differ from each other; (b) configured so that an ion beam is irradiated to a wafer surface to be processed that moves in a reciprocating movement direction; and (c) provided so that a target value of a beam current density distribution of the ion beam is variable in accordance with a position of the wafer in the reciprocating movement direction. Before performing the plurality of ion implantation processes to the same wafer successively, a control device executes a setup process in which a plurality of scanning parameters corresponding to the respective implantation conditions of the plurality of ion implantation processes are determined collectively.
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公开(公告)号：US09905397B2
公开(公告)日：2018-02-27
申请号：US15457698
申请日：2017-03-13
发明人： Shiro Ninomiya , Akihiro Ochi
IPC分类号： H01J37/00 , H01J37/317 , H01J37/08 , H01J37/147 , H01J37/244
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/1474 , H01J37/244 , H01J37/304 , H01J37/3172 , H01J2237/24535 , H01J2237/30488
摘要： An ion implantation apparatus includes a beam scanner that provides reciprocating beam scanning in a beam scanning direction, a beam measurer that measures a beam current intensity distribution in the beam scanning direction at a downstream of the beam scanner, and a controller. The controller includes a scanning waveform preparing unit that determines whether or not a measured beam current intensity distribution measured by the beam measurer with use of a given scanning waveform fits a target non-uniform dose amount distribution, and that, in a case of fitting, correlates the given scanning waveform with the target non-uniform dose amount distribution.
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公开(公告)号：US09837248B2
公开(公告)日：2017-12-05
申请号：US14605404
申请日：2015-01-26
发明人： Masahide Ooura , Daisuke Imai , Shiro Ninomiya
IPC分类号： H01J37/317 , H01J37/30
CPC分类号： H01J37/3171 , H01J37/3002 , H01J2237/0206 , H01J2237/18 , H01J2237/304 , H01J2237/30472
摘要： In an ion implantation apparatus, an interruption member interrupts an ion beam B in the middle of a beam line. A plasma shower device is provided at the downstream side of the interruption member in the beam line. A control unit causes the interruption member to interrupt the ion beam B during an ignition start period of the plasma shower device. The interruption member may be provided at the upstream side of at least one high-voltage electric field type electrode in the beam line. A gas supply unit may supply a source gas to the plasma shower device. The control unit may start the supply of the source gas from the gas supply unit after the ion beam B is interrupted by the interruption member.
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公开(公告)号：US20170271128A1
公开(公告)日：2017-09-21
申请号：US15457698
申请日：2017-03-13
发明人： Shiro Ninomiya , Akihiro Ochi
IPC分类号： H01J37/317 , H01J37/147 , H01J37/244 , H01J37/08
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/1474 , H01J37/244 , H01J37/304 , H01J37/3172 , H01J2237/24535 , H01J2237/30488
摘要： An ion implantation apparatus includes a beam scanner that provides reciprocating beam scanning in a beam scanning direction, a beam measurer that measures a beam current intensity distribution in the beam scanning direction at a downstream of the beam scanner, and a controller. The controller includes a scanning waveform preparing unit that determines whether or not a measured beam current intensity distribution measured by the beam measurer with use of a given scanning waveform fits a target non-uniform dose amount distribution, and that, in a case of fitting, correlates the given scanning waveform with the target non-uniform dose amount distribution.
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公开(公告)号：US09502759B2
公开(公告)日：2016-11-22
申请号：US14566133
申请日：2014-12-10
发明人： Shiro Ninomiya , Masateru Sato
CPC分类号： H01Q1/40 , H01J37/321 , H01J37/3211 , H01Q1/42 , H01Q1/421 , H01Q7/00 , H05H1/46 , H05H2001/4652 , H05H2001/4667
摘要： An antenna cover that protects a surface of an antenna provided in a plasma chamber and exciting an electric field with a high frequency to an inner portion of the plasma chamber is provided. In the antenna cover, the thickness of the antenna cover in at least one direction among directions orthogonal to the surface of the antenna is different according to a position on the surface, such that space dependency of an electric potential on an external surface of the antenna cover decreases. In the antenna cover, the thickness of at least one direction may be changed along an extension direction of the antenna.
摘要翻译： 提供了一种天线罩，其保护设置在等离子体室中的天线的表面并激发高频电场到等离子体室的内部。 在天线罩中，根据天线的表面位置，与天线表面正交的方向中的至少一个方向的天线罩的厚度不同，使得天线的外表面上的电位的空间依赖性 覆盖减少。 在天线罩中，沿着天线的延伸方向可以改变至少一个方向的厚度。
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公开(公告)号：US10249477B2
公开(公告)日：2019-04-02
申请号：US15937346
申请日：2018-03-27
发明人： Syuta Ochi , Shiro Ninomiya , Yuuji Takahashi , Tadanobu Kagawa
IPC分类号： H01J37/32 , H01L21/223 , H01J37/317
摘要： An ion implanter includes a plasma shower device configured to supply electrons to an ion beam with which a wafer is irradiated. The plasma shower device includes a plasma generating chamber provided with an extraction opening, a first electrode which is provided with an opening communicating with the extraction opening and to which a first voltage is applied with respect to an electric potential of the plasma generating chamber, a second electrode which is disposed at a position facing the first electrode such that the ion beam is interposed between the first and second electrodes and to which a second voltage is applied with respect to the electric potential of the plasma generating chamber, and a controller configured to independently control the first voltage and the second voltage to switch operation modes of the plasma shower device.
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公开(公告)号：US20170092464A1
公开(公告)日：2017-03-30
申请号：US15280604
申请日：2016-09-29
发明人： Shiro Ninomiya , Yasuharu Okamoto , Akihiro Ochi , Yusuke Ueno
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01L21/26586
摘要： An ion implantation apparatus performs a plurality of ion implantation processes having different implantation conditions to a same wafer successively. The plurality of ion implantation processes are: (a) provided so that twist angles of the wafer differ from each other; (b) configured so that an ion beam is irradiated to a wafer surface to be processed that moves in a reciprocating movement direction; and (c) provided so that a target value of a beam current density distribution of the ion beam is variable in accordance with a position of the wafer in the reciprocating movement direction. Before performing the plurality of ion implantation processes to the same wafer successively, a control device executes a setup process in which a plurality of scanning parameters corresponding to the respective implantation conditions of the plurality of ion implantation processes are determined collectively.
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