公开(公告)号：US09984856B2

公开(公告)日：2018-05-29

申请号：US15280604

申请日：2016-09-29

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Shiro Ninomiya ,  Yasuharu Okamoto ,  Akihiro Ochi ,  Yusuke Ueno

IPC: A61N5/00 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01L21/26586

Abstract: An ion implantation apparatus performs a plurality of ion implantation processes having different implantation conditions to a same wafer successively. The plurality of ion implantation processes are: (a) provided so that twist angles of the wafer differ from each other; (b) configured so that an ion beam is irradiated to a wafer surface to be processed that moves in a reciprocating movement direction; and (c) provided so that a target value of a beam current density distribution of the ion beam is variable in accordance with a position of the wafer in the reciprocating movement direction. Before performing the plurality of ion implantation processes to the same wafer successively, a control device executes a setup process in which a plurality of scanning parameters corresponding to the respective implantation conditions of the plurality of ion implantation processes are determined collectively.

公开(公告)号：US09905397B2

公开(公告)日：2018-02-27

申请号：US15457698

申请日：2017-03-13

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Shiro Ninomiya ,  Akihiro Ochi

IPC: H01J37/00 ,  H01J37/317 ,  H01J37/08 ,  H01J37/147 ,  H01J37/244

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J37/1474 ,  H01J37/244 ,  H01J37/304 ,  H01J37/3172 ,  H01J2237/24535 ,  H01J2237/30488

Abstract: An ion implantation apparatus includes a beam scanner that provides reciprocating beam scanning in a beam scanning direction, a beam measurer that measures a beam current intensity distribution in the beam scanning direction at a downstream of the beam scanner, and a controller. The controller includes a scanning waveform preparing unit that determines whether or not a measured beam current intensity distribution measured by the beam measurer with use of a given scanning waveform fits a target non-uniform dose amount distribution, and that, in a case of fitting, correlates the given scanning waveform with the target non-uniform dose amount distribution.

公开(公告)号：US20170271128A1

公开(公告)日：2017-09-21

申请号：US15457698

申请日：2017-03-13

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Shiro Ninomiya ,  Akihiro Ochi

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/244 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J37/1474 ,  H01J37/244 ,  H01J37/304 ,  H01J37/3172 ,  H01J2237/24535 ,  H01J2237/30488

Abstract: An ion implantation apparatus includes a beam scanner that provides reciprocating beam scanning in a beam scanning direction, a beam measurer that measures a beam current intensity distribution in the beam scanning direction at a downstream of the beam scanner, and a controller. The controller includes a scanning waveform preparing unit that determines whether or not a measured beam current intensity distribution measured by the beam measurer with use of a given scanning waveform fits a target non-uniform dose amount distribution, and that, in a case of fitting, correlates the given scanning waveform with the target non-uniform dose amount distribution.

公开(公告)号：US20230260741A1

公开(公告)日：2023-08-17

申请号：US18108429

申请日：2023-02-10

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Tetsuya Kudo ,  Akihiro Ochi ,  Shinji Ebisu

IPC: H01J37/20 ,  H01J37/317 ,  H01J37/147 ,  H01J37/04

CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01J37/1475 ,  H01J37/045 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/24564 ,  H01J2237/2007 ,  H01J37/09

Abstract: The ion implantation method includes (a) moving a wafer adjusted to have a first implantation angle with respect to an ion beam from a beam irradiation range toward a beam non-irradiation range; (b) starting a change of the wafer from the first implantation angle to a second implantation angle while the wafer is moved within the beam non-irradiation range after the wafer having the first implantation angle is moved from the beam irradiation range; (c-1) reversing a movement direction of the wafer at an end of the beam non-irradiation range and moving the wafer toward the beam irradiation range; and (c-2) completing the change of the wafer from the first implantation angle to the second implantation angle while the wafer is moved within the beam non-irradiation range before the wafer is returned to the beam irradiation range.

公开(公告)号：US20170092464A1

公开(公告)日：2017-03-30

申请号：US15280604

申请日：2016-09-29

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Shiro Ninomiya ,  Yasuharu Okamoto ,  Akihiro Ochi ,  Yusuke Ueno

IPC: H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01L21/26586

Abstract: An ion implantation apparatus performs a plurality of ion implantation processes having different implantation conditions to a same wafer successively. The plurality of ion implantation processes are: (a) provided so that twist angles of the wafer differ from each other; (b) configured so that an ion beam is irradiated to a wafer surface to be processed that moves in a reciprocating movement direction; and (c) provided so that a target value of a beam current density distribution of the ion beam is variable in accordance with a position of the wafer in the reciprocating movement direction. Before performing the plurality of ion implantation processes to the same wafer successively, a control device executes a setup process in which a plurality of scanning parameters corresponding to the respective implantation conditions of the plurality of ion implantation processes are determined collectively.

公开(公告)号：US20180068829A1

公开(公告)日：2018-03-08

申请号：US15695857

申请日：2017-09-05

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Kazuhisa Ishibashi ,  Shiro Ninomiya ,  Akihiro Ochi ,  Toshio Yumiyama

IPC: H01J37/304 ,  H01J37/30 ,  H01L21/265 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/24514 ,  H01J2237/30455 ,  H01J2237/30477 ,  H01J2237/30488 ,  H01J2237/31701 ,  H01L21/265

Abstract: An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.

公开(公告)号：US10217607B2

公开(公告)日：2019-02-26

申请号：US15695857

申请日：2017-09-05

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Kazuhisa Ishibashi ,  Shiro Ninomiya ,  Akihiro Ochi ,  Toshio Yumiyama

IPC: H01J37/30 ,  H01J37/304 ,  H01J37/317 ,  H01L21/265

Abstract: An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.