Invention Application
- Patent Title: THIN CHANNEL REGION ON WIDE SUBFIN
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Application No.: US15528802Application Date: 2014-12-23
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Publication No.: US20170323963A1Publication Date: 2017-11-09
- Inventor: Sanaz K. GARDNER , Willy RACHMADY , Matthew V. METZ , Gilbert DEWEY , Jack T. KAVALIEROS , Chandra S. MOHAPATRA , Anand S. MURTHY , Nadia RAHHAL-ORABI , Nancy M. ZELICK , Tahir GHANI
- Applicant: INTEL CORPORATION
- International Application: PCT/US2014/072276 WO 20141223
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/205 ; H01L29/66

Abstract:
An embodiment includes a device comprising: a fin structure including an upper portion and a lower portion, the upper portion having a bottom surface directly contacting an upper surface of the lower portion; wherein (a) the lower portion is included in a trench having an aspect ratio (depth to width) of at least 2:1; (b) the bottom surface has a bottom maximum width and the upper surface has an upper maximum width that is greater the bottom maximum width; (c) the bottom surface covers a middle portion of the upper surface but does not cover lateral portions of the upper surface; and (d) the upper portion includes an upper III-V material and the lower portion includes a lower III-V material different from the upper III-V material. Other embodiments are described herein.
Information query
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