- 专利标题： PHOTODETECTOR USING BANDGAP-ENGINEERED 2D MATERIALS AND METHOD OF MANUFACTURING THE SAME
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申请号： US15668997申请日： 2017-08-04
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公开(公告)号： US20170338260A1公开(公告)日： 2017-11-23
- 发明人: Jinseong HEO , Seongjun PARK , Kiyoung LEE , Sangyeob LEE , Eunkyu LEE , Jaeho LEE
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2015-0146663 20151021
- 主分类号： H01L27/146
- IPC分类号： H01L27/146 ; H01L31/0224 ; H01L29/786 ; H01L31/10 ; H01L27/144
摘要：
A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.
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