摘要:
A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.
摘要:
An organic light-emitting device (OLED) includes a first electrode, a second electrode, an emission layer between the first electrode and the second electrode and including an electron-transporting host and a hole-transporting host, a hole transport region between the first electrode and the emission layer and including a hole transport layer, and an electron transport region between the emission layer and the second electrode and including an electron transport layer, wherein the OLED satisfies Equations 1 and 2 below: 0.75 eV≤|LUMOH(ET)−LUMOH(HT)|≤0.90 eV |E(S1, H(ET))−E(S1, H(HT))| wherein in Equations 1 and 2, LUMOH(ET) refers to a lowest unoccupied molecular orbital (LUMO) energy level of the electron-transporting host, LUMOH(HT) refers to an LUMO energy level of the hole-transporting host, E(S1, H(ET)) refers to a singlet energy level of the electron-transporting host, and E(S1, H(HT)) refers to a singlet energy level of the hole-transporting host.
摘要:
An image sensor may include visible light detectors and a near-infrared light detector. The near-infrared light detector may contain a material highly sensitive to near-infrared rays, and thus the size of the near-infrared light detector may be reduced.
摘要:
An organic light-emitting device (OLED) includes a first electrode, a second electrode, an emission layer between the first electrode and the second electrode and including an electron-transporting host and a hole-transporting host, a hole transport region between the first electrode and the emission layer and including a hole transport layer, and an electron transport region between the emission layer and the second electrode and including an electron transport layer, wherein the OLED satisfies Equations 1 and 2 below: 0.75 eV≦|LUMOH(ET)−LUMOH(HT)|≦0.90 eV |E(S1,H(ET))−E(S1,H(HT))| wherein in Equations 1 and 2, LUMOH(ET) refers to a lowest unoccupied molecular orbital (LUMO) energy level of the electron-transporting host, LUMOH(HT) refers to an LUMO energy level of the hole-transporting host, E(S1, H(ET)) refers to a singlet energy level of the electron-transporting host, and E(S1, H(HT)) refers to a singlet energy level of the hole-transporting host.
摘要:
An optical device including a two-dimensional material and a method of manufacturing the same are provided. The optical device may include a barrier stack formed on a bottom channel layer, a top channel layer formed on the barrier stack, a drain electrode connected to the bottom channel layer, a source electrode formed on a substrate. The barrier stack may include two or more barrier layers, and one or more channel units at least partially interposing between the barrier layers. Channel units connected to the drain electrode and channel units connected to the source electrode may be formed, in an alternating sequence, between barrier layers included in the barrier stack. The barrier layers may each have a thickness which is less than a distance which may be traveled by electrons and holes generated by photo absorption prior to recombination. As a result, the optical device may provide improved photo separation efficiency.
摘要:
Example embodiments relate to semiconductor devices including two-dimensional (2D) materials, and methods of manufacturing the semiconductor devices. A semiconductor device may be an optoelectronic device including at least one doped 2D material. The optoelectronic device may include a first electrode, a second electrode, and a semiconductor layer between the first and second electrodes. At least one of the first electrode and the second electrode may include doped graphene. The semiconductor layer may have a built-in potential greater than or equal to about 0.1 eV, or greater than or equal to about 0.3 eV. One of the first electrode and the second electrode may include p-doped graphene, and the other may include n-doped graphene. Alternatively, one of the first electrode and the second electrode may include p-doped or n-doped graphene, and the other may include a metallic material.
摘要:
An organometallic compound represented by Formula 1: M(L1)n1(L2)n2 Formula 1 wherein in Formula 1, M, L1, L2, n1, and n2 are the same as described in the specification.
摘要:
A carbazole-based compound represented by Formula 1A and 1B: wherein in Formulae 1A and 1B, ring A, groups L1, L2, L11, and L12, substituents R1 to R9 and R11 to R18, and variables a1 to a4 and b1 to b3 are the same as defined in the specification.