- 专利标题： METHOD OF SELECTIVE SILICON OXIDE ETCHING
-
申请号： US15604441申请日： 2017-05-24
-
公开(公告)号： US20170345673A1公开(公告)日： 2017-11-30
- 发明人: Alok Ranjan , Akira Koshiishi , Sonam D. Sherpa , Vinayak Rastogi
- 申请人： Tokyo Electron Limited
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/324
摘要：
Embodiments of the invention provide a substrate processing method for selective SiO2 etching relative to other layers used in semiconductor manufacturing. The method includes providing a substrate containing a first layer containing SiO2 and a second layer that is different from the first layer, forming a plasma-excited process gas containing 1) NF3 and NH3, 2) NF3, N2 and H2, or 3) NF3, NH3, N2 and H2, and exposing the substrate to the plasma-excited process gas to selectively etch the first layer relative to the second layer. According to one embodiment, the second layer includes SiN or elemental Si.