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公开(公告)号：US10446405B2
公开(公告)日：2019-10-15
申请号：US15904157
申请日：2018-02-23
发明人： Sonam D. Sherpa , Alok Ranjan
IPC分类号： H01L21/3065 , H01L21/033 , H01L21/311 , H01L21/308 , H01L21/3213 , H01L21/768
摘要： A method of preparing a self-aligned block (SAB) structure is described. The method includes providing a substrate having raised features defined by a first material containing silicon nitride and a second material containing silicon oxide formed on side walls of the first material, and a third material containing an organic material covering some of the raised features and exposing some raised features according to a block pattern formed in the third material. The method further includes forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing N, F, O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second and third material.
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公开(公告)号：US20190080924A1
公开(公告)日：2019-03-14
申请号：US16120547
申请日：2018-09-04
发明人： Sonam D. Sherpa , Alok Ranjan
IPC分类号： H01L21/311 , H01L21/02 , H01L21/033
摘要： A method of etching is described. The method includes forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas and at least one additional gas selected from the group consisting of He and H2, and exposing the first material on the substrate to the first chemical mixture to modify a first region of the first material. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing an inert gas and an additional gas containing C, H, and F, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material, which contains silicon nitride, relative to the second material and remove the modified first material from the first region of the substrate.
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公开(公告)号：US20180261462A1
公开(公告)日：2018-09-13
申请号：US15910508
申请日：2018-03-02
发明人： Sonam D. Sherpa , Alok Ranjan
IPC分类号： H01L21/3065 , C23C16/02 , C01B21/068 , H01L21/311
CPC分类号： H01L21/3065 , C01B21/068 , C23C16/0245 , H01L21/0337 , H01L21/31116
摘要： A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing N and F, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.
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公开(公告)号：US20180061653A1
公开(公告)日：2018-03-01
申请号：US15686546
申请日：2017-08-25
发明人： Sonam D. Sherpa , Alok Ranjan
IPC分类号： H01L21/3065 , C23C16/02
CPC分类号： H01L21/3065 , C01B21/068 , C23C16/0245 , H01L21/0337 , H01L21/31116
摘要： A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing N, F, O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.
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公开(公告)号：US10699911B2
公开(公告)日：2020-06-30
申请号：US16178144
申请日：2018-11-01
发明人： Erdinc Karakas , Sonam D. Sherpa , Alok Ranjan
IPC分类号： H01L21/311 , H01L29/66
摘要： Plasma processing methods that provide for conformal etching of silicon nitride while also providing selectivity to another layer are described. In one embodiment, an etch is provided that utilizes gases which include fluorine, nitrogen, and oxygen, for example a gas mixture of SF6, N2 and O2 gases. Specifically, a plasma etch utilizing SF6, N2 and O2 gases at high pressure with no bias is provided. The process accelerates silicon nitride etching by chemical reactions of [NO]x molecules from the plasma and [N] atoms from silicon nitride film. The etch provides a conformal (isotropic) etch that is selective to other materials such as silicon and silicon oxides (for example, but not limited to, silicon dioxide).
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公开(公告)号：US10658192B2
公开(公告)日：2020-05-19
申请号：US16120554
申请日：2018-09-04
发明人： Sonam D. Sherpa , Alok Ranjan
IPC分类号： H01L21/02 , H01L21/033 , H01L21/311
摘要： A method of etching is described. The method includes forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas and at least one additional gas selected from the group consisting of He and H2, and exposing the first material on the substrate to the first chemical mixture to modify a first region of the first material. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing an inert gas and an additional gas containing C, H, and F, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material, which contains silicon oxide, relative to the second material and remove the modified first material from the first region of the substrate.
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公开(公告)号：US10515814B2
公开(公告)日：2019-12-24
申请号：US16288334
申请日：2019-02-28
发明人： Sonam D. Sherpa , Alok Ranjan
IPC分类号： H01L21/3065 , C23C16/02 , H01L21/033 , H01L21/311 , C01B21/068
摘要： A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing N, F, O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.
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公开(公告)号：US10304688B2
公开(公告)日：2019-05-28
申请号：US15910508
申请日：2018-03-02
发明人： Sonam D. Sherpa , Alok Ranjan
IPC分类号： H01L21/3065 , C23C16/02 , C01B21/068 , H01L21/311 , H01L21/033
摘要： A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing N and F, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.
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公开(公告)号：US20170345673A1
公开(公告)日：2017-11-30
申请号：US15604441
申请日：2017-05-24
发明人： Alok Ranjan , Akira Koshiishi , Sonam D. Sherpa , Vinayak Rastogi
IPC分类号： H01L21/311 , H01L21/324
CPC分类号： H01L21/31116 , H01L21/0337 , H01L21/324 , H01L21/76897
摘要： Embodiments of the invention provide a substrate processing method for selective SiO2 etching relative to other layers used in semiconductor manufacturing. The method includes providing a substrate containing a first layer containing SiO2 and a second layer that is different from the first layer, forming a plasma-excited process gas containing 1) NF3 and NH3, 2) NF3, N2 and H2, or 3) NF3, NH3, N2 and H2, and exposing the substrate to the plasma-excited process gas to selectively etch the first layer relative to the second layer. According to one embodiment, the second layer includes SiN or elemental Si.
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公开(公告)号：US20200273713A1
公开(公告)日：2020-08-27
申请号：US15930708
申请日：2020-05-13
发明人： Sonam D. Sherpa , Alok Ranjan
IPC分类号： H01L21/311 , H01J37/32
摘要： In one exemplary embodiment, described herein is an ALE process for etching an oxide. In one embodiment, the oxide is silicon oxide. The ALE modification step includes the use of a carbon tetrafluoride (CF4) based plasma. This modification step preferentially removes oxygen from the surface of the silicon oxide, providing a silicon rich surface. The ALE removal step includes the use of a hydrogen (H2) based plasma. This removal step removes the silicon enriched monolayer formed in the modification step. The silicon oxide etch ALE process utilizing CF4 and H2 steps may be utilized in a wide range of substrate process steps. For example, the ALE process may be utilized for, but is not limited to, self-aligned contact etch steps, silicon fin reveal steps, oxide mandrel pull steps, oxide spacer trim, and oxide liner etch.
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