- 专利标题: METHOD FOR STRUCTURING A NITRIDE LAYER, STRUCTURED DIELECTRIC LAYER, OPTOELECTRONIC COMPONENT, ETCHING METHOD FOR ETCHING LAYERS, AND AN ENVIRONMENT SENSOR
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申请号: US15552258申请日: 2016-02-19
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公开(公告)号: US20180040485A1公开(公告)日: 2018-02-08
- 发明人: Andreas RUECKERL , Roland ZEISEL , Simeon KATZ
- 申请人: OSRAM Opto Semiconductors GmbH
- 优先权: DE102015102454.3 20150220
- 国际申请: PCT/EP2016/053586 WO 20160219
- 主分类号: H01L21/3213
- IPC分类号: H01L21/3213 ; H01L33/00 ; H01S5/22 ; H01L31/0232 ; H01L31/0236 ; H01L31/0304 ; H01L33/44 ; H01L21/02
摘要:
The invention relates to a method for structuring a nitride layer (2), comprising the following steps: A) providing a nitride layer (2) formed with silicon nitride of a first type, B) defining regions (40) of said nitride layer (2) to be transformed, and C) inserting the nitride layer (2) into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer (2) regions (40) to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer (2) regions (21) remain at least 80% untransformed.