公开(公告)号：US20200168472A1

公开(公告)日：2020-05-28

申请号：US16714447

申请日：2019-12-13

申请人： OSRAM Opto Semiconductors GmbH

发明人： Andreas RUECKERL ,  Roland ZEISEL ,  Simeon KATZ

IPC分类号： H01L21/3213 ,  H01L31/0304 ,  H01S5/22 ,  H01L33/44 ,  H01L33/00 ,  H01L31/0236 ,  H01L31/0232 ,  H01L21/02

摘要： The invention relates to a method for structuring a nitride layer (2), comprising the following steps: A) providing a nitride layer (2) formed with silicon nitride of a first type, B) defining regions (40) of said nitride layer (2) to be transformed, and C) inserting the nitride layer (2) into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer (2) regions (40) to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer (2) regions (21) remain at least 80% untransformed.

公开(公告)号：US20180040485A1

公开(公告)日：2018-02-08

申请号：US15552258

申请日：2016-02-19

申请人： OSRAM Opto Semiconductors GmbH

发明人： Andreas RUECKERL ,  Roland ZEISEL ,  Simeon KATZ

IPC分类号： H01L21/3213 ,  H01L33/00 ,  H01S5/22 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/0304 ,  H01L33/44 ,  H01L21/02

CPC分类号： H01L21/3213 ,  H01L21/02389 ,  H01L31/02327 ,  H01L31/02366 ,  H01L31/03044 ,  H01L33/0075 ,  H01L33/44 ,  H01L2933/0025 ,  H01S5/22

摘要： The invention relates to a method for structuring a nitride layer (2), comprising the following steps: A) providing a nitride layer (2) formed with silicon nitride of a first type, B) defining regions (40) of said nitride layer (2) to be transformed, and C) inserting the nitride layer (2) into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer (2) regions (40) to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer (2) regions (21) remain at least 80% untransformed.