- 专利标题: NANOPOROUS SEMICONDUCTOR THIN FILMS
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申请号: US15676617申请日: 2017-08-14
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公开(公告)号: US20180052136A1公开(公告)日: 2018-02-22
- 发明人: Ying DIAO , Fengjiao ZHANG
- 申请人: The Board of Trustees of the University of Illinois
- 申请人地址: US IL Urbana
- 专利权人: The Board of Trustees of the University of Illinois
- 当前专利权人: The Board of Trustees of the University of Illinois
- 当前专利权人地址: US IL Urbana
- 主分类号: G01N27/414
- IPC分类号: G01N27/414 ; H01L51/05 ; H01L51/00 ; G01N33/00 ; G01N33/497
摘要:
The present disclosure provides a method of fabricating a nanoporous thin film device comprising depositing a template on a substrate to form a nanoporous insulating layer, the template comprising one or more polymers capable of forming pores when polymerized and at least one cross-linking agent, and depositing a second layer (e.g. organic semiconductor, semiconductor, insulator) on the nanopourous insulating layer to form a thin film having a plurality of isolated nanopores on the surface. Nanoporous semiconductor thin films made by these methods is provided. Sensors and devices comprising the nanoporous thin film is also disclosed.