- 专利标题： HEAT DISSIPATION STRUCTURE USING GRAPHENE QUANTUM DOTS AND METHOD OF MANUFACTURING THE HEAT DISSIPATION STRUCTURE
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申请号： US15497683申请日： 2017-04-26
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公开(公告)号： US20180061734A1公开(公告)日： 2018-03-01
- 发明人: Dongwook LEE , Sangwon KIM , Minsu SEOL , Seongjun JEONG , Seunggeol NAM , Seongjun PARK , Hyeonjin SHIN
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2016-0106980 20160823
- 主分类号： H01L23/373
- IPC分类号： H01L23/373 ; H01L21/48 ; H01L23/31
摘要：
Disclosed are heat dissipation structures using nano-sized graphene fragments such as graphene quantum dots (GQDs) and/or methods of manufacturing the heat dissipation structures. A heat dissipation structure includes a heating element, and a heat dissipation film on the heating element to dissipate heat generated from the heating element, to outside. The heat dissipation film may include GQDs.
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