Invention Application
- Patent Title: SINGLE OXIDE METAL DEPOSITION CHAMBER
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Application No.: US15703626Application Date: 2017-09-13
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Publication No.: US20180073150A1Publication Date: 2018-03-15
- Inventor: Anantha K. SUBRAMANI , Praburam GOPALRAJA , Tza-Jing GUNG , Hari K. PONNEKANTI , Philip Allan KRAUS
- Applicant: Applied Materials, Inc.
- Main IPC: C23C28/02
- IPC: C23C28/02 ; C23C16/458 ; C23C16/40 ; C23C16/06 ; C23C14/50 ; C23C14/14 ; C23C14/02 ; H01J37/34 ; H01J37/32 ; C23C14/34 ; H01L21/02 ; H01L21/285

Abstract:
Implementations described herein generally relate to metal oxide deposition in a processing chamber. More specifically, implementations disclosed herein relate to a combined chemical vapor deposition and physical vapor deposition chamber. Utilizing a single oxide metal deposition chamber capable of performing both CVD and PVD advantageously reduces the cost of uniform semiconductor processing. Additionally, the single oxide metal deposition system reduces the time necessary to deposit semiconductor substrates and reduces the foot print required to process semiconductor substrates. In one implementation, the processing chamber includes a gas distribution plate disposed in a chamber body, one or more metal targets disposed in the chamber body, and a substrate support disposed below the gas distribution plate and the one or more targets.
Public/Granted literature
- US10597785B2 Single oxide metal deposition chamber Public/Granted day:2020-03-24
Information query
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