公开(公告)号：US20200335368A1

公开(公告)日：2020-10-22

申请号：US16391262

申请日：2019-04-22

Applicant: Applied Materials, Inc.

Inventor： Yaoling PAN ,  Patrick John TAE ,  Michael D. WILLWERTH ,  Leonard M. TEDESCHI ,  Daniel Sang BYUN ,  Philip Allan KRAUS ,  Phillip A. CRIMINALE ,  Changhun LEE ,  Rajinder DHINDSA ,  Andreas SCHMID ,  Denis M. KOOSAU

IPC: H01L21/67 ,  H01J37/32 ,  H03K17/955 ,  H01L21/66

Abstract: The present disclosure generally relates to a method and apparatus for determining a metric related to erosion of a ring assembly used in an etching within a plasma processing chamber. In one example, the apparatus is configured to obtain a metric indicative of erosion on an edge ring disposed on a substrate support assembly in a plasma processing chamber. A sensor obtains the metric for the edge ring. The metric correlates to the quantity of erosion in the edge ring. In another example, the ring sensor may be arranged outside of a periphery of a substrate support assembly. The metric may be acquired by the ring sensor through a plasma screen.

公开(公告)号：US20190088521A1

公开(公告)日：2019-03-21

申请号：US15710763

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng CHUA ,  Philip Allan KRAUS ,  Travis Lee KOH ,  Christian AMORMINO ,  Jaeyong CHO

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  C23C16/511 ,  C23C16/505 ,  C23C16/458 ,  C23C16/455

Abstract: The present disclosure generally relates to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide independent pulses of DC voltage through a switching system to electrodes disposed through the ESC substrate support, or to electrodes disposed on a surface of the ESC, or to electrodes embedded in the ESC substrate support. The switching system can independently alter the frequency and duty cycle of the pulsed DC voltage that is coupled to each electrode. During processing of the substrate, the process rate, such as etch rate or deposition rate, can be controlled independently in regions of the substrate because the process rate is a function of the frequency and duty cycle of the pulsed DC voltage. The processing uniformity of the process performed on the substrate is improved.

公开(公告)号：US20220227622A1

公开(公告)日：2022-07-21

申请号：US17713410

申请日：2022-04-05

Applicant: Applied Materials, Inc.

Inventor： Philip Allan KRAUS ,  Joseph R. JOHNSON

IPC: B81C1/00 ,  H01L21/02 ,  G01N33/487 ,  G01N27/49

Abstract: Methods are provided for manufacturing well-controlled, solid-state nanopores and arrays thereof. In one aspect, methods for manufacturing nanopores and arrays thereof exploit a physical seam. One or more etch pits are formed in a topside of a substrate and one or more trenches, which align with the one or more etch pits, are formed in a backside of the substrate. An opening is formed between the one or more etch pits and the one or more trenches. A dielectric material is then formed over the substrate to fill the opening. Contacts are then disposed on the topside and the backside of the substrate and a voltage is applied from the topside to the backside, or vice versa, through the dielectric material to form a nanopore. In another aspect, the nanopore is formed at or near the center of the opening at a seam, which is formed in the dielectric material.

公开(公告)号：US20180053634A1

公开(公告)日：2018-02-22

申请号：US15238695

申请日：2016-08-16

Applicant: Applied Materials, Inc.

Inventor： Philip Allan KRAUS ,  Thai Cheng CHUA

IPC: H01J37/32 ,  C23C16/511 ,  C23C16/455

Abstract: Embodiments include a modular microwave source. In an embodiment, the modular microwave source comprises a voltage control circuit, a voltage controlled oscillator, where an output voltage from the voltage control circuit drives oscillation in the voltage controlled oscillator. The modular microwave source may also include a solid state microwave amplification module coupled to the voltage controlled oscillator. In an embodiment, the solid state microwave amplification module amplifies an output from the voltage controlled oscillator. The modular microwave source may also include an applicator coupled to the solid state microwave amplification module, where the applicator is a dielectric resonator.

公开(公告)号：US20200227242A1

公开(公告)日：2020-07-16

申请号：US16834814

申请日：2020-03-30

Applicant: Applied Materials, Inc.

Inventor： Timothy Joseph FRANKLIN ,  Steven E. BABAYAN ,  Philip Allan KRAUS

IPC: H01J37/32 ,  B05B1/00 ,  B05B1/18 ,  B05B12/10 ,  H01L21/67

Abstract: Embodiments described herein generally related to a substrate processing apparatus, and more specifically to an improved showerhead assembly for a substrate processing apparatus. The showerhead assembly includes a chill plate, a gas plate, and a gas distribution plate having a top surface and a bottom surface. A plurality of protruded features contacts the top surface of the gas distribution plate. A fastener and an energy storage structure is provided on the protruded features. The energy storage structure is compressed by the fastener and axially loads at least one of the protruded features to compress the chill plate, the gas plate and the gas distribution plate.

公开(公告)号：US20190088520A1

公开(公告)日：2019-03-21

申请号：US15710753

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Philip Allan KRAUS ,  Thai Cheng CHUA ,  Jaeyong CHO

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/02 ,  H01L21/223 ,  H01L21/3065

Abstract: A method and apparatus for biasing regions of a substrate in a plasma assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for managing uniformity of processing results across the substrate.

公开(公告)号：US20180073150A1

公开(公告)日：2018-03-15

申请号：US15703626

申请日：2017-09-13

Applicant: Applied Materials, Inc.

Inventor： Anantha K. SUBRAMANI ,  Praburam GOPALRAJA ,  Tza-Jing GUNG ,  Hari K. PONNEKANTI ,  Philip Allan KRAUS

IPC: C23C28/02 ,  C23C16/458 ,  C23C16/40 ,  C23C16/06 ,  C23C14/50 ,  C23C14/14 ,  C23C14/02 ,  H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  H01L21/02 ,  H01L21/285

Abstract: Implementations described herein generally relate to metal oxide deposition in a processing chamber. More specifically, implementations disclosed herein relate to a combined chemical vapor deposition and physical vapor deposition chamber. Utilizing a single oxide metal deposition chamber capable of performing both CVD and PVD advantageously reduces the cost of uniform semiconductor processing. Additionally, the single oxide metal deposition system reduces the time necessary to deposit semiconductor substrates and reduces the foot print required to process semiconductor substrates. In one implementation, the processing chamber includes a gas distribution plate disposed in a chamber body, one or more metal targets disposed in the chamber body, and a substrate support disposed below the gas distribution plate and the one or more targets.

公开(公告)号：US20210134561A1

公开(公告)日：2021-05-06

申请号：US17144973

申请日：2021-01-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Travis KOH ,  Philip Allan KRAUS ,  Leonid DORF ,  Prabu GOPALRAJA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.

公开(公告)号：US20190326098A1

公开(公告)日：2019-10-24

申请号：US15958478

申请日：2018-04-20

Applicant: Applied Materials, Inc.

Inventor： Hanh NGUYEN ,  Thai Cheng CHUA ,  Philip Allan KRAUS

IPC: H01J37/32

Abstract: Embodiments described herein include a processing tool that comprises a processing chamber, a chuck for supporting a substrate in the processing chamber, a dielectric window forming a portion of the processing chamber, and a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source comprises a plurality of high-frequency emission modules. In an embodiment, each high-frequency emission module comprises, an oscillator module, amplification module, and an applicator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, the applicator is positioned proximate to the dielectric window.

公开(公告)号：US20190326095A1

公开(公告)日：2019-10-24

申请号：US15958470

申请日：2018-04-20

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng CHUA ,  Christian AMORMINO ,  Hanh NGUYEN ,  Kallol BERA ,  Philip Allan KRAUS

IPC: H01J37/32

Abstract: Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises and oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.