Invention Application
- Patent Title: PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
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Application No.: US15445027Application Date: 2017-02-28
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Publication No.: US20180082821A1Publication Date: 2018-03-22
- Inventor: Norihiko IKEDA , Naoki YASUI
- Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Priority: JP2016-181131 20160916
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A plasma processing apparatus according to the present invention includes a processing chamber, a first radio frequency power source, and a second radio frequency power source. The first radio frequency power source supplies radio frequency power to generate the plasma. The second radio frequency power source applies a first radio frequency voltage to a sample stage. The plasma processing apparatus further includes a third radio frequency power source and a control unit. The third radio frequency power source applies, to the sample stage, a second radio frequency voltage having a frequency which is N times a frequency of the first radio frequency voltage in a case where N is a natural number of 2 or more. The control unit controls a phase difference such that the phase difference between a phase of the first radio frequency voltage and a phase of the second radio frequency voltage reaches a predetermined value.
Public/Granted literature
- US11355315B2 Plasma processing apparatus and plasma processing method Public/Granted day:2022-06-07
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