公开(公告)号：US20190088452A1

公开(公告)日：2019-03-21

申请号：US15919682

申请日：2018-03-13

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kazuya YAMADA ,  Koichi YAMAMOTO ,  Naoki YASUI ,  Norihiko IKEDA ,  Isao MORI

IPC: H01J37/32 ,  H01L21/67

Abstract: According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency power and the second radio frequency power by a predetermined amount.

公开(公告)号：US20200286715A1

公开(公告)日：2020-09-10

申请号：US16640443

申请日：2019-03-06

Applicant: Hitachi High-Technologies Corporation

Inventor： Norihiko IKEDA ,  Naoki YASUI ,  Kazuya YAMADA

IPC: H01J37/32 ,  H01L21/3065

Abstract: A plasma processing apparatus includes a processing chamber 101 where a wafer 114 is processed using plasma 111, a radio frequency power supply 106 configured to supply a radio frequency power for generating the plasma 111, a mechanism configured to form a magnetic field for forming ECR and to control a magnetic flux density thereof, and a sample stage 113 on which the wafer 114 is placed. The plasma processing apparatus further includes a control unit 107 configured to, based on image data of the plasma 111, monitor a height of ECR which is electron cyclotron resonance generated by an interaction between the radio frequency power and the magnetic field, and to control a frequency of the radio frequency power such that the monitored ECR height becomes a predetermined height.

公开(公告)号：US20180082821A1

公开(公告)日：2018-03-22

申请号：US15445027

申请日：2017-02-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Norihiko IKEDA ,  Naoki YASUI

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32119 ,  H01J37/32183 ,  H01J37/32669 ,  H01J2237/3341

Abstract: A plasma processing apparatus according to the present invention includes a processing chamber, a first radio frequency power source, and a second radio frequency power source. The first radio frequency power source supplies radio frequency power to generate the plasma. The second radio frequency power source applies a first radio frequency voltage to a sample stage. The plasma processing apparatus further includes a third radio frequency power source and a control unit. The third radio frequency power source applies, to the sample stage, a second radio frequency voltage having a frequency which is N times a frequency of the first radio frequency voltage in a case where N is a natural number of 2 or more. The control unit controls a phase difference such that the phase difference between a phase of the first radio frequency voltage and a phase of the second radio frequency voltage reaches a predetermined value.