A substrate processing device includes a bath configured to accommodate a plurality of substrates and configured to store a liquid for etching the plurality of substrates, a plurality of bubble generators configured to generate bubbles in the liquid, the bubble generators provided so as to correspond to each of the plurality of substrates, a measurement device configured to measure the generation state of the bubbles of at least one of the plurality of bubble generators, and a control device configured to individually control at least one of the plurality of bubble generators based on the measurement result of the measurement device.