Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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Application No.: US15449654Application Date: 2017-03-03
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Publication No.: US20180090438A1Publication Date: 2018-03-29
- Inventor: Masayuki KITAMURA , Atsuko SAKATA
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2016-186045 20160923
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/532 ; H01L21/768

Abstract:
According to some embodiments, a semiconductor device includes a substrate and an insulating film that is provided on the substrate. The device further includes a contact plug which includes a barrier metal layer provided in the insulating film, and a plug material layer provided in the insulating film, the barrier metal layer disposed between the plug material layer and the insulating film. The barrier metal layer includes at least a first layer including a first metal element and nitrogen, and a second layer including a second metal element different from the first metal element, and nitrogen.
Public/Granted literature
- US10134673B2 Semiconductor device and manufacturing method thereof Public/Granted day:2018-11-20
Information query
IPC分类: