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公开(公告)号:US20200091088A1
公开(公告)日:2020-03-19
申请号:US16294984
申请日:2019-03-07
Applicant: TOSHIBA MEMORY CORPORATION
Inventor: Satoshi WAKATSUKI , Masayuki KITAMURA , Atsuko SAKATA
IPC: H01L23/00 , H01L27/11521 , H01L27/11568 , H01L29/06
Abstract: In one embodiment, a semiconductor device includes a substrate, and a plurality of insulating layers provided on the substrate. The device further includes a plurality of electrode layers provided on the substrate alternately with the plurality of insulating layers and including metal atoms and impurity atoms different from the metal atoms, lattice spacing between the metal atoms in the electrode layers being greater than lattice spacing between the metal atoms in an elemental substance of the metal atoms.
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公开(公告)号:US20180261466A1
公开(公告)日:2018-09-13
申请号:US15695918
申请日:2017-09-05
Applicant: TOSHIBA MEMORY CORPORATION
Inventor: Soichi YAMAZAKI , Kazuhito FURUMOTO , Kosuke HORIBE , Keisuke KIKUTANI , Atsuko SAKATA , Junichi WADA , Toshiyuki SASAKI
IPC: H01L21/311 , H01L21/033 , H01L21/3213
Abstract: A method of manufacturing a semiconductor device includes forming a mask layer including aluminum or an aluminum compound on a layer to be etched comprising at least one first metal selected from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium. The method of manufacturing a semiconductor device further includes patterning the mask layer, and etching the layer to be etched by using the patterned mask layer to form a hole or a groove in the layer to be etched.
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公开(公告)号:US20200286954A1
公开(公告)日:2020-09-10
申请号:US16570230
申请日:2019-09-13
Applicant: Toshiba Memory Corporation
Inventor: Takanori USAMI , Takeshi ISHIZAKI , Ryohei KITAO , Katsuyoshi KOMATSU , Takeshi IWASAKI , Atsuko SAKATA
Abstract: A storage device according to embodiments includes a first conductive layer; a second conductive layer; a resistance change element provided between the first conductive layer and the second conductive layer; and an intermediate layer provided in any one of a position between the resistance change element and the first conductive layer and a position between the resistance change element and the second conductive layer, the intermediate layer containing at least one element of silicon (Si) and germanium (Ge), tellurium (Te), and aluminum (Al).
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公开(公告)号:US20200075341A1
公开(公告)日:2020-03-05
申请号:US16283570
申请日:2019-02-22
Applicant: TOSHIBA MEMORY CORPORATION
Inventor: Yuya MATSUBARA , Masayuki KITAMURA , Atsuko SAKATA
IPC: H01L21/3065 , H01L21/311 , H01L27/11582
Abstract: A mask member contains tungsten (W), boron (B), and carbon (C). The mask member includes a first portion in contact with a process film, the first portion, in which the terms of the composition ratio, which correspond to boron and carbon, are larger than the term of the composition ratio, which corresponds to tungsten, and a second portion in which the term of the composition ratio, which corresponds to tungsten, is larger than the terms of the composition ratio, which correspond to carbon and boron.
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公开(公告)号:US20180274092A1
公开(公告)日:2018-09-27
申请号:US15695929
申请日:2017-09-05
Applicant: TOSHIBA MEMORY CORPORATION
Inventor: Masayuki KITAMURA , Atsuko SAKATA , Satoshi WAKATSUKI
IPC: C23C16/44 , H01L21/285 , C23C16/455 , C23C16/458 , H01L21/205 , C30B29/06
CPC classification number: C23C16/4401 , C23C16/4412 , C23C16/45527 , C23C16/45565 , C23C16/4587 , C30B29/06 , H01L21/205 , H01L21/28556 , H01L21/76877
Abstract: A semiconductor manufacturing apparatus includes a reaction chamber configured to perform a process on a semiconductor substrate using a gas mixture comprising a first gas, and a first path configured to exhaust resultant gas that comprises the first gas from the reaction chamber. The semiconductor manufacturing apparatus further includes a first trap provided in the first path and configured to extract at least a portion of the first gas from the resultant gas, and a second path in which the trap is not provided and configured to exhaust the resultant gas from the reaction chamber.
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公开(公告)号:US20210233872A1
公开(公告)日:2021-07-29
申请号:US17231350
申请日:2021-04-15
Applicant: TOSHIBA MEMORY CORPORATION
Inventor: Satoshi WAKATSUKI , Masayuki KITAMURA , Atsuko SAKATA
IPC: H01L23/00 , H01L29/06 , H01L27/11568 , H01L27/11521
Abstract: In one embodiment, a semiconductor device includes a substrate, and a plurality of insulating layers provided on the substrate. The device further includes a plurality of electrode layers provided on the substrate alternately with the plurality of insulating layers and including metal atoms and impurity atoms different from the metal atoms, lattice spacing between the metal atoms in the electrode layers being greater than lattice spacing between the metal atoms in an elemental substance of the metal atoms.
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公开(公告)号:US20200303641A1
公开(公告)日:2020-09-24
申请号:US16556057
申请日:2019-08-29
Applicant: TOSHIBA MEMORY CORPORATION
Inventor: Daisuke IKENO , Akihiro KAJITA , Atsuko SAKATA
Abstract: According to one embodiment, a storage device includes a first conductive layer, a second conductive layer, a resistance-variable layer, between the first conductive layer and the second conductive layer, that includes germanium, antimony, and tellurium, a first layer, between the resistance-variable layer and the first conductive layer, that includes carbon, a second layer, between the resistance-variable layer and the second conductive layer, that includes carbon, a third layer, between the resistance-variable layer and the first layer, that includes at least one of tungsten nitride or tungsten carbide, and a fourth layer, between the resistance-variable layer and the second layer, that includes at least one of tungsten nitride or tungsten carbide.
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公开(公告)号:US20190267543A1
公开(公告)日:2019-08-29
申请号:US16117718
申请日:2018-08-30
Applicant: TOSHIBA MEMORY CORPORATION
Inventor: Kazuhiro KATONO , Takeshi ISHIZAKI , Atsuko SAKATA
IPC: H01L45/00
Abstract: According to one embodiment, the semiconductor memory device includes a first electrode, a first material layer, comprising a first material, located on the first electrode, a second material, surrounded by the first material of the first material layer, comprising a phase change material, and a second electrode provided on the first material.
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公开(公告)号:US20190279932A1
公开(公告)日:2019-09-12
申请号:US16103106
申请日:2018-08-14
Applicant: TOSHIBA MEMORY CORPORATION
Inventor: Satoshi WAKATSUKI , Masayuki KITAMURA , Takeshi ISHIZAKI , Hiroshi ITOKAWA , Daisuke IKENO , Kei WATANABE , Atsuko SAKATA
IPC: H01L23/522 , H01L27/1157 , H01L27/11582 , H01L23/532 , H01L21/28 , H01L21/768
Abstract: In one embodiment, a semiconductor device includes a first insulator. The device further includes a metal layer that includes a first metal layer provided on a surface of the first insulator, and a second metal layer provided on a surface of the first metal layer and containing a first metallic element and oxygen or containing aluminum and nitrogen, or includes a third metal layer provided on the surface of the first insulator and containing a second metallic element, aluminum and nitrogen. The device further includes an interconnect material layer provided on a surface of the metal layer.
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公开(公告)号:US20180090438A1
公开(公告)日:2018-03-29
申请号:US15449654
申请日:2017-03-03
Applicant: TOSHIBA MEMORY CORPORATION
Inventor: Masayuki KITAMURA , Atsuko SAKATA
IPC: H01L23/528 , H01L23/532 , H01L21/768
CPC classification number: H01L23/5283 , H01L21/76804 , H01L21/76826 , H01L21/76846 , H01L21/76879 , H01L21/76883 , H01L23/53266 , H01L23/53295
Abstract: According to some embodiments, a semiconductor device includes a substrate and an insulating film that is provided on the substrate. The device further includes a contact plug which includes a barrier metal layer provided in the insulating film, and a plug material layer provided in the insulating film, the barrier metal layer disposed between the plug material layer and the insulating film. The barrier metal layer includes at least a first layer including a first metal element and nitrogen, and a second layer including a second metal element different from the first metal element, and nitrogen.
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