STORAGE DEVICE
    3.
    发明申请
    STORAGE DEVICE 审中-公开

    公开(公告)号:US20200286954A1

    公开(公告)日:2020-09-10

    申请号:US16570230

    申请日:2019-09-13

    Abstract: A storage device according to embodiments includes a first conductive layer; a second conductive layer; a resistance change element provided between the first conductive layer and the second conductive layer; and an intermediate layer provided in any one of a position between the resistance change element and the first conductive layer and a position between the resistance change element and the second conductive layer, the intermediate layer containing at least one element of silicon (Si) and germanium (Ge), tellurium (Te), and aluminum (Al).

    STORAGE DEVICE
    7.
    发明申请
    STORAGE DEVICE 审中-公开

    公开(公告)号:US20200303641A1

    公开(公告)日:2020-09-24

    申请号:US16556057

    申请日:2019-08-29

    Abstract: According to one embodiment, a storage device includes a first conductive layer, a second conductive layer, a resistance-variable layer, between the first conductive layer and the second conductive layer, that includes germanium, antimony, and tellurium, a first layer, between the resistance-variable layer and the first conductive layer, that includes carbon, a second layer, between the resistance-variable layer and the second conductive layer, that includes carbon, a third layer, between the resistance-variable layer and the first layer, that includes at least one of tungsten nitride or tungsten carbide, and a fourth layer, between the resistance-variable layer and the second layer, that includes at least one of tungsten nitride or tungsten carbide.

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