Invention Application
- Patent Title: INTEGRATION OF DUAL REMOTE PLASMAS SOURCES FOR FLOWABLE CVD
-
Application No.: US15822276Application Date: 2017-11-27
-
Publication No.: US20180148840A1Publication Date: 2018-05-31
- Inventor: Ying MA , Daemian RAJ , Jay D. PINSON, II , DongQing LI , Jingmei LIANG , Yizhen ZHANG
- Applicant: Applied Materials, Inc.
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/458

Abstract:
Implementations described herein generally relate to an apparatus for forming flowable films. In one implementation, the apparatus is a processing chamber including a first RPS coupled to a lid of the processing chamber and a second RPS coupled to a side wall of the processing chamber. The first RPS is utilized for delivering deposition radicals into a processing region in the processing chamber and the second RPS is utilized for delivering cleaning radicals into the processing region. The processing chamber further includes a radical delivery ring disposed between a showerhead and a substrate support for delivering cleaning radicals from the second RPS into the processing region. Having separate RPSs for deposition and clean along with introducing radicals from the RPSs into the processing region using separate delivery channels minimizes cross contamination and cyclic change on the RPSs, leading to improved deposition rate drifting and particle performance.
Public/Granted literature
- US10934620B2 Integration of dual remote plasmas sources for flowable CVD Public/Granted day:2021-03-02
Information query
IPC分类: