公开(公告)号：US20200381248A1

公开(公告)日：2020-12-03

申请号：US16817007

申请日：2020-03-12

Applicant: Applied Materials, Inc.

Inventor： Yong SUN ,  Praket Prakash JHA ,  Jingmei LIANG ,  Martin Jay SEAMONS ,  DongQing LI ,  Shashank SHARMA ,  Abhilash J. MAYUR ,  Wolfgang R. ADERHOLD

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  C23C16/30

Abstract: A method of post-treating a dielectric film formed on a surface of a substrate includes positioning a substrate having a dielectric film formed thereon in a processing chamber and exposing the dielectric film to microwave radiation in the processing chamber at a frequency between 5 GHz and 7 GHz.

公开(公告)号：US20180148840A1

公开(公告)日：2018-05-31

申请号：US15822276

申请日：2017-11-27

Applicant: Applied Materials, Inc.

Inventor： Ying MA ,  Daemian RAJ ,  Jay D. PINSON, II ,  DongQing LI ,  Jingmei LIANG ,  Yizhen ZHANG

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45565 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/458 ,  C23C16/54 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32862

Abstract: Implementations described herein generally relate to an apparatus for forming flowable films. In one implementation, the apparatus is a processing chamber including a first RPS coupled to a lid of the processing chamber and a second RPS coupled to a side wall of the processing chamber. The first RPS is utilized for delivering deposition radicals into a processing region in the processing chamber and the second RPS is utilized for delivering cleaning radicals into the processing region. The processing chamber further includes a radical delivery ring disposed between a showerhead and a substrate support for delivering cleaning radicals from the second RPS into the processing region. Having separate RPSs for deposition and clean along with introducing radicals from the RPSs into the processing region using separate delivery channels minimizes cross contamination and cyclic change on the RPSs, leading to improved deposition rate drifting and particle performance.

公开(公告)号：US20170306493A1

公开(公告)日：2017-10-26

申请号：US15494186

申请日：2017-04-21

Applicant: Applied Materials, Inc.

Inventor： Daemian RAJ ,  Ying MA ,  DongQing LI ,  Jay D. PINSON, II

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/455 ,  C23C16/44 ,  H01L21/02 ,  B08B7/00

CPC classification number: C23C16/50 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/4408 ,  C23C16/452 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/54 ,  H01J37/32449 ,  H01J37/32899

Abstract: A method and apparatus for a deposition chamber is provided and includes a twin chamber that includes a first remote plasma system coupled and dedicated to a first processing region, a second remote plasma system coupled and dedicated to a second processing region, and a third remote plasma system shared by the first processing region and the second processing region.