Invention Application
- Patent Title: CONDUCTIVE INTERCONNECT STRUCTURES INCORPORATING NEGATIVE THERMAL EXPANSION MATERIALS AND ASSOCIATED SYSTEMS, DEVICES, AND METHODS
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Application No.: US15889120Application Date: 2018-02-05
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Publication No.: US20180174902A1Publication Date: 2018-06-21
- Inventor: Hongqi Li , Anurag Jindal , Jin Lu , Shyam Ramalingam
- Applicant: Micron Technology, Inc.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/48 ; H01L21/288
Abstract:
Semiconductor devices having interconnects incorporating negative expansion (NTE) materials are disclosed herein. In one embodiment a semiconductor device includes a substrate having an opening that extends at least partially through the substrate. A conductive material having a positive coefficient of thermal expansion (CTE) partially fills the opening. A negative thermal expansion (NTE) having a negative CTE also partially fills the opening. In one embodiment, the conductive material includes copper and the NTE material includes zirconium tungstate.
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