Invention Application
- Patent Title: RAMO4 SUBSTRATE, AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTALS
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Application No.: US15825035Application Date: 2017-11-28
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Publication No.: US20180174911A1Publication Date: 2018-06-21
- Inventor: SHINSUKE KOMATSU , YOSHIO OKAYAMA , MASAKI NOBUOKA
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Priority: JP2016-243430 20161215; JP2017-174893 20170912
- Main IPC: H01L21/78
- IPC: H01L21/78 ; C30B29/40 ; H01L21/02 ; C01F17/00 ; C30B25/18 ; H01L33/00

Abstract:
An RAMO4 substrate that includes an RAMO4 monocrystalline substrate formed of a single crystal represented by general formula RAMO4, wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd. The RAMO4 monocrystalline substrate has a principal surface with a plurality of grooves. The principal surface has an off-angle θ with respect to a cleaving surface of the single crystal. The RAMO4 monocrystalline substrate satisfies tan θ≤Wy/Wx, where Wx is the width at the top surface of a raised portion between the grooves, and Wy is the height of the raised portion.
Public/Granted literature
- US10304740B2 RAMO4 monocrystalline substrate Public/Granted day:2019-05-28
Information query
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