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    METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND APPARATUS FOR PRODUCING THE SAME
    2.
    发明申请
    METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND APPARATUS FOR PRODUCING THE SAME 审中-公开
    生产III族氮化物晶体的方法及其制造方法

    公开(公告)号：US20160090304A1

    公开(公告)日：2016-03-31

    申请号：US14847176

    申请日：2015-09-08

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： YUSUKE MORI ,  MAMORU IMADE ,  TOMIO YAMASHITA ,  RYO KUWABARA ,  YOSHIO OKAYAMA

    IPC: C01B21/06 ,  B01J19/24

    CPC classification number: C01B21/0632

    Abstract: A method and apparatus for producing a Group III nitride in which the thermal decomposition of the nitrogen element-containing gas is suppressed to enhance the productivity. The method for producing a Group III nitride crystal, comprising: reacting an oxide or a metal of a Group III element under a heated atmosphere to form a compound gas of the Group III element; mixing a nitrogen element-containing gas at a temperature that is lower than that of the compound gas, with the compound gas; and reacting the nitrogen element-containing gas with the compound gas to form a Group III nitride crystal.

    Abstract translation: 用于制造其中含氮元素气体的热分解被抑制以提高生产率的III族氮化物的方法和装置。 制备III族氮化物晶体的方法，包括：在加热的气氛下使III族元素的氧化物或金属反应以形成III族元素的化合物气体; 以比化合气低的温度混合含氮元素的气体; 并使含氮元素的气体与复合气体反应，形成III族氮化物晶体。

    LIGHT EMITTING DEVICE, MANUFACTURING METHOD THEREFOR, AND WAVEGUIDE STRUCTURE
    3.
    发明申请
    LIGHT EMITTING DEVICE, MANUFACTURING METHOD THEREFOR, AND WAVEGUIDE STRUCTURE 有权

    公开(公告)号：US20230021122A1

    公开(公告)日：2023-01-19

    申请号：US17807889

    申请日：2022-06-21

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： TAKEHIRO ASAHI ,  NAOYA RYOKI ,  YUKIO NISHIKAWA ,  YOSHIO OKAYAMA

    IPC: F21V8/00

    Abstract: A light emitting device includes a light source and a waveguide structure. The light source emits light having a directionality. The waveguide structure includes an optical waveguide and an exterior part. The optical waveguide has an incident end surface and an emission end surface, converts a wavelength of the light incident from the incident end surface, and emits the light from the emission end surface. The exterior part is optically transparent and covers the optical waveguide such that the incident end surface and the emission end surface are exposed from the exterior part. The optical waveguide is elongated in a length direction. The length direction of the optical waveguide is inclined at a predetermined angle with respect to an optical axis of the light in a predetermined plane including the length direction of the optical waveguide and the optical axis of the light. The predetermined angle is set to allow the light to propagate in the optical waveguide with total internal reflection at a boundary surface between the optical waveguide and the exterior part.

    APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND METHOD FOR PRODUCING THE SAME
    4.
    发明申请
    APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND METHOD FOR PRODUCING THE SAME 审中-公开
    用于生产III族氮化物晶体的装置及其制造方法

    公开(公告)号：US20160090665A1

    公开(公告)日：2016-03-31

    申请号：US14847188

    申请日：2015-09-08

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： YOSHIO OKAYAMA ,  RYO KUWABARA ,  TOMIO YAMASHITA ,  YUSUKE MORI ,  MAMORU IMADE

    IPC: C30B25/10 ,  C30B29/40 ,  C30B25/14 ,  C30B25/12 ,  C01B21/06 ,  C30B25/08

    CPC classification number: C30B25/10 ,  C01B21/0632 ,  C30B25/12 ,  C30B25/14 ,  C30B29/406

    Abstract: Apparatus and method for producing a Group III nitride crystal are to be provided. The apparatus for producing a Group III nitride crystal, contains: a chamber; a nitrogen element-containing gas supplying port for supplying a nitrogen element-containing gas to the chamber; a compound gas supplying port for supplying a compound gas of the Group III element to the chamber, so as to mix the compound gas with the nitrogen element-containing gas; a discharging port for discharging the compound gas and the nitrogen element-containing gas thus mixed, outside the chamber; a holder for holding a seed substrate at a position that is on a downstream side of a mixing point of the compound gas and the nitrogen element-containing gas and is an upstream side of the discharging port; a first heater for heating the seed substrate; and a second heater for heating a space between the mixing point and the seed substrate to a temperature that is higher than a temperature heated by the first heater.

    Abstract translation: 提供用于制造III族氮化物晶体的装置和方法。 用于制造III族氮化物晶体的装置包括：室; 含氮元素的气体供给口，用于向所述室供给含氮元素的气体; 用于将第III族元素的复合气体供给到室中的复合气体供给口，以使复合气体与含氮元素的气体混合; 用于将混合气体和这样混合的含氮元素的气体排出的排出口在室外; 用于将种子基板保持在所述复合气体和所述含氮元素气体的混合点的下游侧的位置并且位于所述排出口的上游侧的保持器; 用于加热种子基底的第一加热器; 以及第二加热器，用于将混合点和种子基底之间的空间加热至高于由第一加热器加热的温度的温度。

    LIGHT EMITTING DEVICE, MANUFACTURING METHOD, AND WAVEGUIDE STRUCTURE
    5.
    发明申请
    LIGHT EMITTING DEVICE, MANUFACTURING METHOD, AND WAVEGUIDE STRUCTURE 有权

    公开(公告)号：US20220190557A1

    公开(公告)日：2022-06-16

    申请号：US17512632

    申请日：2021-10-27

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： NAOYA RYOKI ,  YUKIO NISHIKAWA ,  TAKEHIRO ASAHI ,  YOSHIO OKAYAMA

    IPC: H01S5/10 ,  H01S5/14 ,  H01S3/063

    Abstract: A light emitting device includes a light source that emits light having a directivity from a light emitting surface of the light source, a waveguide structure that includes an optical waveguide having an inlet facing the light emitting surface, and a peripheral wall protruding from the inlet toward the light emitting surface, and a lens that is provided between the light emitting surface and the inlet. The peripheral wall has an inner surface surrounding the inlet. The peripheral wall has a first opening closer to the light emitting surface and a second opening closer to the inlet. The first opening is larger than the second opening. The peripheral wall includes a narrow opening portion in which an internal space of the peripheral wall is smaller than the lens when viewed from a direction of an optical axis of the light. The inner surface of the peripheral wall includes an inclined surface that inclines so that the internal space becomes narrower as approaching the inlet, at least in the narrow opening portion. The lens is disposed in contact with the narrow opening portion in the internal space of the peripheral wall.

    LIGHT-EMITTING DEVICE
    9.
    发明申请
    LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20240372316A1

    公开(公告)日：2024-11-07

    申请号：US18779051

    申请日：2024-07-21

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： YUKIO NISHIKAWA ,  TAKEHIRO ASAHI ,  YOSHIO OKAYAMA

    IPC: H01S5/02253

    Abstract: Light-emitting device (1) includes waveguide structure (5) and exterior part (4). Waveguide structure (5) includes light receiving surface (51) including incident end surface (31) and first surface (41), and radiation surface (52) including emission end surface (32) and second surface (42). A position of waveguide structure (5) with respect to light source (2) is determined to cause light (L1) to be incident on light receiving surface (51). Incident range (R) on which light (L1) is incident on light receiving surface (51) includes at least a part of incident end surface (31) and at least a part of first surface (41) such that a part of light (L1) is incident on incident end surface (31) and another part of light (L1) is incident on first surface (41), passes through exterior part (4), and is emitted from second surface (42).

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