Invention Application
- Patent Title: ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR FILM
-
Application No.: US15897689Application Date: 2018-02-15
-
Publication No.: US20180175300A1Publication Date: 2018-06-21
- Inventor: Yosuke YAMAMOTO , Hiroo TAKIZAWA , Yuta SHIGENOI , Fumiko TAMAKUNI , Takashi GOTO , Tetsuya WATANABE
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2015-173260 20150902; JP2016-052511 20160316
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/05 ; C08G61/12

Abstract:
An object of the present invention is to provide an organic thin film transistor exhibiting high carrier mobility and a low threshold voltage and having excellent heat resistance, a method of manufacturing an organic thin film transistor, an organic semiconductor composition, an organic semiconductor film, and a method of manufacturing an organic semiconductor film. The organic thin film transistor according to the present invention includes, on a substrate, a gate electrode; an organic semiconductor layer containing an organic semiconductor compound; a gate insulating layer provided between the gate electrode and the organic semiconductor layer; and a source electrode and a drain electrode which are provided to be in contact with the organic semiconductor layer and are connected to each other via the organic semiconductor layer, in which the organic semiconductor layer is in contact with a block copolymer layer containing a block copolymer or further contains the block copolymer, and in which the organic semiconductor compound has a molecular weight of 2,000 or greater and has a repeating unit represented by Formula (1).
Information query
IPC分类: