公开(公告)号：US20250089386A1

公开(公告)日：2025-03-13

申请号：US18956750

申请日：2024-11-22

Applicant: FUJIFILM Corporation

Inventor： Takashi GOTO ,  Tetsushi MIYATA

IPC: H01L27/146

Abstract: Provided is a photodetector element having a photoelectric conversion element, an optical filter provided on a light incident side of the photoelectric conversion element, and an interlayer provided between the photoelectric conversion element and the optical filter, in which the photoelectric conversion element has a quantum dot layer, a first electrode, and a second electrode, the optical filter has predetermined spectral characteristics, and the interlayer includes at least one kind of atom selected from the group consisting of Si, Al, Zr, Sn, Zn, Ce, and Hf, or includes a paraxylene polymer, or has a water vapor permeability as determined by a method in accordance with JIS K 7129 of 1×10−4 g/m2/day or less. Provided also are an image sensor and a method for manufacturing a photodetector element.

公开(公告)号：US20180175299A1

公开(公告)日：2018-06-21

申请号：US15897720

申请日：2018-02-15

Applicant: FUJIFILM Corporation

Inventor： Yosuke YAMAMOTO ,  Hiroo TAKIZAWA ,  Yuta SHIGENOI ,  Fumiko TAMAKUNI ,  Takashi GOTO ,  Tetsuya WATANABE

IPC: H01L51/00 ,  C08G61/12

CPC classification number: H01L51/0036 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/1424 ,  C08G2261/148 ,  C08G2261/18 ,  C08G2261/228 ,  C08G2261/314 ,  C08G2261/3223 ,  C08G2261/3225 ,  C08G2261/3241 ,  C08G2261/3243 ,  C08G2261/3246 ,  C08G2261/92 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/0043 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/0558

Abstract: An object of the present invention is to provide an organic thin film transistor exhibiting high carrier mobility and a low threshold voltage and having excellent heat resistance, a method of manufacturing an organic thin film transistor, an organic semiconductor composition, an organic semiconductor film, and a method of manufacturing an organic semiconductor film. The organic thin film transistor according to the present invention includes, on a substrate, a gate electrode; an organic semiconductor layer containing an organic semiconductor compound; a gate insulating layer provided between the gate electrode and the organic semiconductor layer; and a source electrode and a drain electrode which are provided to be in contact with the organic semiconductor layer and are linked to each other via the organic semiconductor layer, in which the organic semiconductor layer is in contact with a layer containing a resin (C) or further contains the resin (C), and in which the organic semiconductor compound has a molecular weight of 2,000 or greater and has a repeating unit represented by Formula (1). D-A  (1)

公开(公告)号：US20130113972A1

公开(公告)日：2013-05-09

申请号：US13732988

申请日：2013-01-02

Applicant: FUJIFILM CORPORATION

Inventor： Takashi GOTO

IPC: H04N5/335

CPC classification number: H04N5/335 ,  H01L27/14609 ,  H01L27/14647 ,  H01L27/14667 ,  H04N5/355 ,  H04N5/3698 ,  H04N5/374

Abstract: A solid-state imaging device includes a photoelectric conversion layer, a MOS transistor circuit. The photoelectric conversion layer is formed over a semiconductor substrate. The MOS transistor circuit reads out a signal corresponding to charges generated in the photoelectric conversion layer and then collected, and that is formed in the semiconductor substrate, the charges having a given polarity. The MOS transistor circuit includes a charge accumulation portion, a reset transistor, and an output transistor. The charge accumulation portion is electrically connected with the photoelectric conversion layer. The reset transistor resets a potential of the charge accumulation portion to a reset potential. The output transistor outputs a signal corresponding to the potential of the charge accumulation portion. The reset transistor and the output transistor have carriers whose polarity is opposite to the given polarity. In the MOS transistor circuit, following formula (1) is satisfied: GND

Abstract translation: 固态成像装置包括光电转换层，MOS晶体管电路。 光电转换层形成在半导体衬底上。 MOS晶体管电路读出与光电转换层中产生的电荷对应的信号，然后在半导体衬底中形成具有给定极性的电荷。 MOS晶体管电路包括电荷累积部分，复位晶体管和输出晶体管。 电荷累积部分与光电转换层电连接。 复位晶体管将电荷累积部分的电位复位到复位电位。 输出晶体管输出对应于电荷累积部分的电位的信号。 复位晶体管和输出晶体管具有极性与给定极性相反的载流子。 在MOS晶体管电路中，满足下式（1）：GND

公开(公告)号：US20250089435A1

公开(公告)日：2025-03-13

申请号：US18956748

申请日：2024-11-22

Applicant: FUJIFILM Corporation

Inventor： Takashi GOTO ,  Tetsushi Miyata

IPC: H10K39/32 ,  B82Y20/00 ,  C09K11/02 ,  C09K11/08 ,  C09K11/62 ,  C09K11/66 ,  C09K11/70 ,  C09K11/74 ,  C09K11/75

Abstract: Provided is a photodetector element having a photoelectric conversion element, an optical filter provided on a light incident side of the photoelectric conversion element, a dielectric multi-layer film provided on a light incident side of the optical filter, and an interlayer provided between the photoelectric conversion element and the optical filter, in which the photoelectric conversion element has a quantum dot layer, a first electrode, and a second electrode, the optical filter is a laminated film including a first filter layer including a coloring material and a second filter layer including a coloring material, and the interlayer includes at least one kind of atom selected from the group consisting of Si, Al, Zr, Sn, Zn, Ce, and Hf, or includes a paraxylene polymer, or has a water vapor permeability as determined by a method in accordance with JIS K 7129 of 1×10−4 g/m2/day or less. Provided also are an image sensor and a method for manufacturing a photodetector element.

公开(公告)号：US20190221754A1

公开(公告)日：2019-07-18

申请号：US16358933

申请日：2019-03-20

Applicant: FUJIFILM Corporation

Inventor： Takashi GOTO ,  Eiji FUKUZAKI ,  Tetsuya WATANABE

IPC: H01L51/00 ,  H01L51/05

CPC classification number: H01L51/0074 ,  H01L29/786 ,  H01L51/0067 ,  H01L51/0072 ,  H01L51/0073 ,  H01L51/05 ,  H01L51/0516 ,  H01L51/0545

Abstract: An object is to provide a bottom gate type organic semiconductor transistor in which a sufficient carrier mobility is exhibited, a variation in performance between elements is small, and power consumption is also suppressed.Provided is a bottom gate type organic semiconductor transistor including: a gate insulating layer; and an organic semiconductor layer that is disposed adjacent to the gate insulating layer. in which a surface free energy of a surface of the gate insulating layer on the organic semiconductor layer side is 20 to 50 mN/m, an arithmetic average roughness Ra of the surface of the gate insulating layer on the organic semiconductor layer side is 2 nm or lower, and the organic semiconductor layer includes a compound represented by the following Formula (1) that has a molecular weight of 3000 or lower. X, Y, and Z each independently represent a specific ring-constituting atom. R1 and R2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group, and R3 and R4 each independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n each independently represent an integer of 0 to 2.

公开(公告)号：US20140087514A1

公开(公告)日：2014-03-27

申请号：US14073504

申请日：2013-11-06

Applicant: FUJIFILM CORPORATION

Inventor： Toshihiro NAKATANI ,  Takashi GOTO ,  Yoshiki MORITA ,  Shinji IMAI ,  Hideyuki SUZUKI ,  Daigo SAWAKI

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L27/307 ,  H01L51/0026 ,  H01L51/4253 ,  H01L51/4273 ,  H01L51/441 ,  Y02E10/549 ,  Y02P70/521

Abstract: A photoelectric converter includes a pair of electrodes and a plurality of organic layers. The pair of electrodes is provided above a substrate. The plurality of organic layers is interposed between the pair of electrodes and includes a photoelectric conversion layer and a given organic layer being formed on one electrode of the pair of electrodes. The one electrode is one of pixel electrodes arranged two-dimensionally. The given organic layer has a concave portion that is formed in a corresponding position located above a step portion among the arranged pixel electrodes. An angle θ of the concave portion is less than 50°, where an inclination angle of a tangent plane at a given point on the concave portion to a surface plane of the substrate is defined as θ.

Abstract translation: 光电转换器包括一对电极和多个有机层。 一对电极设置在基板上。 多个有机层插入在该对电极之间，并且包括形成在该对电极的一个电极上的光电转换层和给定的有机层。 一个电极是二维布置的像素电极之一。 给定的有机层具有形成在布置的像素电极中位于台阶部分之上的对应位置的凹部。 角度和角度 的凹部的面的角度小于50°，其中凹部上的给定点上的切平面与基板的表面平面的倾斜角度定义为θ。

公开(公告)号：US20190237677A1

公开(公告)日：2019-08-01

申请号：US16358910

申请日：2019-03-20

Applicant: FUJIFILM Corporation

Inventor： Takashi GOTO ,  Eiji FUKUZAKI ,  Tetsuya WATANABE

IPC: H01L51/00 ,  C07D517/14 ,  C07D493/14 ,  C07D495/14 ,  C07D513/14 ,  C07D498/14

CPC classification number: H01L51/0071 ,  C07D493/14 ,  C07D495/14 ,  C07D498/14 ,  C07D513/14 ,  C07D517/14 ,  H01L29/786 ,  H01L51/001 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0073 ,  H01L51/05 ,  H01L51/0558

Abstract: Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. In the organic semiconductor film, the formation or propagation of cracks can be effectively suppressed even in a case where the organic semiconductor film is patterned or is exposed to high heat.Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. The microcrystalline organic semiconductor film includes a compound represented by the following Formula (1) that has a molecular weight of 3000 or lower and in which a crystal domain size is 1 nm to 100 nm. X, Y, and Z each independently represent a specific ring-constituting atom. R1 and R2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. R3 and R4 each independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n each independently represent an integer of 0 to 2.

公开(公告)号：US20180205021A1

公开(公告)日：2018-07-19

申请号：US15885857

申请日：2018-02-01

Applicant: FUJIFILM Corporation ,  THE UNIVERSITY OF TOKYO

Inventor： Masashi KOYANAGI ,  Hiroaki TSUYAMA ,  Eiji FUKUZAKI ,  Yoshihisa USAMI ,  Tetsuya WATANABE ,  Takashi GOTO ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC: H01L51/00 ,  C09D5/24 ,  C07D345/00 ,  C07D421/14

Abstract: An object of the present invention is to provide a compound which, when used for organic semiconductor films in organic thin-film transistors, makes the organic thin-film transistors exhibit a high carrier mobility, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, an organic thin-film transistor and a method for manufacturing the same, and an organic semiconductor film.An organic thin-film transistor of the present invention contains a compound represented by General Formula (1) in an organic semiconductor film (organic semiconductor layer) thereof.

公开(公告)号：US20180159053A1

公开(公告)日：2018-06-07

申请号：US15885859

申请日：2018-02-01

Applicant: FUJIFILM Corporation ,  THE UNIVERSITY OF TOKYO

Inventor： Masashi KOYANAGI ,  Hiroaki TSUYAMA ,  Eiji FUKUZAKI ,  Yoshihisa USAMI ,  Tetsuya WATANABE ,  Takashi GOTO ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC: H01L51/00 ,  C07F7/18 ,  C07F7/08

CPC classification number: H01L51/0094 ,  C07F7/0812 ,  C07F7/1804 ,  H01L51/0003 ,  H01L51/0004 ,  H01L51/0005 ,  H01L51/0007 ,  H01L51/0012 ,  H01L51/0074 ,  H01L51/0545 ,  H01L51/0558

Abstract: An object of the present invention is to provide an organic thin-film transistor which has an organic semiconductor film produced using a compound having an excellent solubility in organic solvents and has an excellent carrier mobility, a compound, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, a method for manufacturing an organic thin-film transistor, and an organic semiconductor film.An organic thin-film transistor of the present invention contains a compound which is represented by General Formula (1) or General Formula (2) in an organic semiconductor film (organic semiconductor layer) thereof and has a molecular weight of 3,000 or less. In General Formula (1) and General Formula (2), at least one of R5, . . . , or R8 is a group other than a hydrogen atom.

公开(公告)号：US20140022432A1

公开(公告)日：2014-01-23

申请号：US14034438

申请日：2013-09-23

Applicant: Fujifilm Corporation

Inventor： Takashi GOTO

IPC: H04N5/3745

CPC classification number: H04N5/3745 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14643 ,  H04N5/361 ,  H04N5/374

Abstract: The invention is directed to a solid-state imaging device in which pixels each including a photoelectric conversion portion formed above a semiconductor substrate and an MOS type signal reading circuit formed at the semiconductor substrate and provided for reading out a signal corresponding to electric charges generated in the photoelectric conversion portion are disposed in an array form, wherein: the photoelectric conversion portion includes a pixel electrode, a counter electrode and a photoelectric conversion layer as defined herein; a bias voltage is applied to the counter electrode as defined herein; the signal reading circuit includes a charge storage portion, an output transistor and a reset transistor as defined herein; the charge storage portion includes a first charge storage region, a second charge storage region and a separation/connection region as defined herein; and the output transistor outputs a signal corresponding to the potential of the second charge storage region.

Abstract translation: 本发明涉及一种固态成像装置，其中各自包括形成在半导体衬底上的光电转换部分的像素和形成在半导体衬底上的MOS型信号读取电路，用于读出对应于在 光电转换部分以阵列形式布置，其中：光电转换部分包括如本文所定义的像素电极，对电极和光电转换层; 偏置电压施加到如本文所定义的对电极; 信号读取电路包括如本文所定义的电荷存储部分，输出晶体管和复位晶体管; 电荷存储部分包括如本文所定义的第一电荷存储区域，第二电荷存储区域和分离/连接区域; 并且输出晶体管输出与第二电荷存储区域的电位相对应的信号。