公开(公告)号：US20170288151A1

公开(公告)日：2017-10-05

申请号：US15622076

申请日：2017-06-14

Applicant: FUJIFILM CORPORATION

Inventor： Yuta SHIGENOI ,  Tetsu KITAMURA

IPC: H01L51/00 ,  C09D11/033 ,  C09D11/52 ,  C09D11/102 ,  C09D11/36

CPC classification number: H01L51/0074 ,  C09D11/033 ,  C09D11/102 ,  C09D11/36 ,  C09D11/52 ,  H01L29/786 ,  H01L51/0004 ,  H01L51/0005 ,  H01L51/0007 ,  H01L51/004 ,  H01L51/0068 ,  H01L51/0094 ,  H01L51/0558 ,  H01L51/0575

Abstract: A composition for forming an organic semiconductor film includes an organic semiconductor represented by the following Formula A-1, and a solvent having a boiling point of from 150° C. to 300° C. and an SP value of from 15.0 to 18.0.

公开(公告)号：US20200069531A1

公开(公告)日：2020-03-05

申请号：US16675412

申请日：2019-11-06

Applicant: FUJIFILM Corporation

Inventor： Yuta SHIGENOI

IPC: A61K6/00 ,  C09D133/10 ,  C09D133/14 ,  C09D133/26 ,  C09D135/00 ,  A61C13/02

Abstract: The present invention provides a laminate having excellent bacteria adhesion suppression performance. The present invention also provides a kit and a method for producing a laminate. A laminate according to the present invention includes a base material, an undercoat layer formed of an undercoat layer forming composition containing a polymer containing a repeating unit containing a polymerizable group and a repeating unit containing a polar group, and a cured film formed of a curable composition containing at least one compound selected from the group consisting of a compound represented by Formula (I), a compound represented by Formula (II), a compound represented by Formula (IV), and a compound represented by Formula (V) in this order.

公开(公告)号：US20180175299A1

公开(公告)日：2018-06-21

申请号：US15897720

申请日：2018-02-15

Applicant: FUJIFILM Corporation

Inventor： Yosuke YAMAMOTO ,  Hiroo TAKIZAWA ,  Yuta SHIGENOI ,  Fumiko TAMAKUNI ,  Takashi GOTO ,  Tetsuya WATANABE

IPC: H01L51/00 ,  C08G61/12

CPC classification number: H01L51/0036 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/1424 ,  C08G2261/148 ,  C08G2261/18 ,  C08G2261/228 ,  C08G2261/314 ,  C08G2261/3223 ,  C08G2261/3225 ,  C08G2261/3241 ,  C08G2261/3243 ,  C08G2261/3246 ,  C08G2261/92 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/0043 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/0558

Abstract: An object of the present invention is to provide an organic thin film transistor exhibiting high carrier mobility and a low threshold voltage and having excellent heat resistance, a method of manufacturing an organic thin film transistor, an organic semiconductor composition, an organic semiconductor film, and a method of manufacturing an organic semiconductor film. The organic thin film transistor according to the present invention includes, on a substrate, a gate electrode; an organic semiconductor layer containing an organic semiconductor compound; a gate insulating layer provided between the gate electrode and the organic semiconductor layer; and a source electrode and a drain electrode which are provided to be in contact with the organic semiconductor layer and are linked to each other via the organic semiconductor layer, in which the organic semiconductor layer is in contact with a layer containing a resin (C) or further contains the resin (C), and in which the organic semiconductor compound has a molecular weight of 2,000 or greater and has a repeating unit represented by Formula (1). D-A  (1)

公开(公告)号：US20170098786A1

公开(公告)日：2017-04-06

申请号：US15382745

申请日：2016-12-19

Applicant: FUJIFILM CORPORATION

Inventor： Tetsu KITAMURA ,  Masashi KOYANAGI ,  Yuta SHIGENOI

IPC: H01L51/00 ,  C09D5/24

CPC classification number: H01L51/0074 ,  C07C43/162 ,  C07D307/77 ,  C07D333/18 ,  C07D493/06 ,  C07D495/04 ,  C07D495/14 ,  C07D495/22 ,  C07F7/00 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/3162 ,  C08G2261/3246 ,  C08G2261/344 ,  C08G2261/512 ,  C08G2261/92 ,  C08K5/01 ,  C08K5/45 ,  C09D5/24 ,  C09D11/106 ,  C09D11/36 ,  C09D11/52 ,  C09D165/00 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/0004 ,  H01L51/0005 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0068 ,  H01L51/0073 ,  H01L51/0094 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/0566 ,  C08L65/00

Abstract: Objects of the present invention are to provide a composition for forming an organic semiconductor film that has excellent preservation stability and makes the obtained organic semiconductor element exhibit excellent driving stability in the atmosphere, to provide an organic semiconductor film using the composition for forming an organic semiconductor film, a method for manufacturing the organic semiconductor film, an organic semiconductor element, a method for manufacturing the organic semiconductor element, and to provide a novel organic semiconductor compound.A composition for forming an organic semiconductor film of the present invention contains a specific organic semiconductor having an alkoxyalkyl group as a component A and a solvent as a component B, in which a content of a non-halogen-based solvent is equal to or greater than 50% by mass with respect to a total content of the component B, and a content of the component A is equal to or greater than 0.7% by mass and less than 15% by mass.

公开(公告)号：US20240425754A1

公开(公告)日：2024-12-26

申请号：US18808281

申请日：2024-08-19

Applicant: FUJIFILM Corporation

Inventor： Yuta SHIGENOI ,  Atsushi MIZUTANI ,  Tomonori TAKAHASHI

IPC: C09K13/02 ,  H01L21/3213

Abstract: An object of the present invention is to provide a composition for manufacturing a semiconductor, which is capable of selectively removing silicon in a case of being applied to an object to be treated containing silicon-germanium and silicon; a method for treating an object to be treated using the composition for manufacturing a semiconductor; and a method for manufacturing a semiconductor element using the composition for manufacturing a semiconductor.
The composition for manufacturing a semiconductor according to the present invention is a composition which includes a specific compound having two or more sulfur atoms and one or more heteroatoms other than a sulfur atom, an organic solvent, and water, and is alkaline.

公开(公告)号：US20240026254A1

公开(公告)日：2024-01-25

申请号：US18356507

申请日：2023-07-21

Applicant: FUJIFILM Corporation

Inventor： Shimpei YAMADA ,  Tetsuya KAMIMURA ,  Naoko OUCHI ,  Naotsugu MURO ,  Nobuaki SUGIMURA ,  Yuta SHIGENOI

IPC: C11D11/00 ,  C11D3/30 ,  C11D3/20

CPC classification number: C11D11/0047 ,  C11D3/30 ,  C11D3/2096 ,  H01L21/02065

Abstract: An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent cleaning performance and excellent ruthenium oxide dissolving ability in a case of being applied as a cleaning liquid after a CMP treatment of a semiconductor substrate including a metal film. A cleaning liquid for a semiconductor substrate according to the present invention is a cleaning liquid for a semiconductor substrate, which is used for cleaning a semiconductor substrate, where the cleaning liquid contains at least one purine compound selected from the group consisting of purine and a purine derivative and a compound represented by Formula (A).

公开(公告)号：US20210332180A1

公开(公告)日：2021-10-28

申请号：US17369201

申请日：2021-07-07

Applicant: FUJIFILM Corporation ,  KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION

Inventor： Yosuke YAMAMOTO ,  Yuta SHIGENOI ,  Atsushi SUGASAKI ,  Masaru TANAKA ,  Shingo KOBAYASHI

IPC: C08G18/81 ,  C08J5/18

Abstract: The present invention provides a cell adhesion sheet in which the adhesion of platelets is suppressed and the adhesion of cells is excellent. The cell adhesion sheet according to the embodiment of the present invention is formed of a composition containing a compound represented by Formula (1).

公开(公告)号：US20230420266A1

公开(公告)日：2023-12-28

申请号：US18463754

申请日：2023-09-08

Applicant: FUJIFILM Corporation

Inventor： Yuta SHIGENOI ,  Atsushi Mizutani ,  Tomonori Takahashi

IPC: H01L21/3213

CPC classification number: H01L21/32134

Abstract: The present invention provides a composition for treating a semiconductor in which etching of silicon germanium is suppressed and a ratio of an etching rate of silicon to an etching rate of silicon germanium is large. In addition, the present invention provides a method for treating an object to be treated using a composition for treating a semiconductor. The composition for treating a semiconductor according to the present invention is a composition for treating a semiconductor including a quaternary ammonium salt having a hydroxyl group, a polar organic solvent, at least one nitrogen-containing compound selected from the group consisting of a compound represented by Formula (1), a compound represented by Formula (2), and salts thereof, and water, in which the mass ratio of the nitrogen-containing compound to the quaternary ammonium salt is 0.00001 to 0.1.

公开(公告)号：US20180175300A1

公开(公告)日：2018-06-21

申请号：US15897689

申请日：2018-02-15

Applicant: FUJIFILM Corporation

Inventor： Yosuke YAMAMOTO ,  Hiroo TAKIZAWA ,  Yuta SHIGENOI ,  Fumiko TAMAKUNI ,  Takashi GOTO ,  Tetsuya WATANABE

IPC: H01L51/00 ,  H01L51/05 ,  C08G61/12

CPC classification number: H01L51/0043 ,  C08G61/12 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0041 ,  H01L51/052 ,  H01L51/0529

Abstract: An object of the present invention is to provide an organic thin film transistor exhibiting high carrier mobility and a low threshold voltage and having excellent heat resistance, a method of manufacturing an organic thin film transistor, an organic semiconductor composition, an organic semiconductor film, and a method of manufacturing an organic semiconductor film. The organic thin film transistor according to the present invention includes, on a substrate, a gate electrode; an organic semiconductor layer containing an organic semiconductor compound; a gate insulating layer provided between the gate electrode and the organic semiconductor layer; and a source electrode and a drain electrode which are provided to be in contact with the organic semiconductor layer and are connected to each other via the organic semiconductor layer, in which the organic semiconductor layer is in contact with a block copolymer layer containing a block copolymer or further contains the block copolymer, and in which the organic semiconductor compound has a molecular weight of 2,000 or greater and has a repeating unit represented by Formula (1).

公开(公告)号：US20180145259A1

公开(公告)日：2018-05-24

申请号：US15857746

申请日：2017-12-29

Applicant: FUJIFILM Corporation

Inventor： Yosuke YAMAMOTO ,  Yuta SHIGENOI

IPC: H01L51/00 ,  C09D5/24 ,  C09D165/00 ,  C08G61/12

CPC classification number: H01L51/0036 ,  C08G61/12 ,  C08G61/123 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/1424 ,  C08G2261/148 ,  C08G2261/149 ,  C08G2261/18 ,  C08G2261/228 ,  C08G2261/314 ,  C08G2261/3223 ,  C08G2261/3241 ,  C08G2261/3243 ,  C08G2261/3246 ,  C08G2261/334 ,  C08G2261/344 ,  C08G2261/414 ,  C08G2261/51 ,  C08G2261/514 ,  C08G2261/92 ,  C09D5/24 ,  C09D165/00 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/0043 ,  H01L51/0558

Abstract: An object of the present invention is to provide an organic semiconductor element (in particular, an organic thin film transistor) that exhibits high carrier mobility and can stably maintain carrier mobility even after long-term storage under high temperature and high humidity, a compound, an organic semiconductor composition, and a method of manufacturing an organic semiconductor film. The organic semiconductor element of the present invention contains a compound having a molecular weight of 2,000 or greater and a repeating unit represented by Formula (1). In Formula (1), A represents an electron acceptor unit, D is an electron donor unit, and at least one of D or A has at least one monovalent group represented by Formula (1-1). In Formula (1-1), Ar represents an aromatic heterocyclic group or an aromatic hydrocarbon group having 5 to 18 carbon atoms. Ca represents CR1R2. La represents an alkylene group having 1 to 20 carbon atoms. Lb represents an alkyl group having 9 or more carbon atoms. l represents an integer of 1 to 5. * represents a bonding site to another structure. D-A(1)*-Ca-La-ArLb)l  (1-1)