Invention Application
- Patent Title: METHOD FOR FORMING A SEMICONDUCTOR STRUCTURE
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Application No.: US15391048Application Date: 2016-12-27
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Publication No.: US20180182862A1Publication Date: 2018-06-28
- Inventor: Yi-Hui Lin , Keng-Jen Lin , Yu-Ren Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/762 ; H01L21/3205 ; H01L21/321 ; H01L21/3213
Abstract:
A method for forming a semiconductor structure includes the following steps. First, a preliminary structure is provided. The preliminary structure includes a substrate and a plurality of fins formed on the substrate. Then, a first polysilicon layer is formed on the substrate. The first polysilicon layer covers at least portions of the fins. An amorphous silicon layer is formed on the first polysilicon layer.
Public/Granted literature
- US10043888B2 Method for forming a semiconductor structure Public/Granted day:2018-08-07
Information query
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