公开(公告)号：US20190006172A1

公开(公告)日：2019-01-03

申请号：US15639381

申请日：2017-06-30

申请人： United Microelectronics Corp.

发明人： Hsu Ting ,  Kuang-Hsiu Chen ,  Chun-Wei Yu ,  Keng-Jen Lin ,  Yu-Ren Wang

IPC分类号： H01L21/02

摘要： A method for processing a semiconductor device is provided. The semiconductor device includes a protruding structure on a substrate, the protruding structure having a nitride spacer at a sidewall, and an epitaxial layer is formed in the substrate adjacent to the protruding structure. The method includes removing the nitride spacer on the protruding structure. Then, a dilute hydrofluoric (DHF) cleaning process is performed over the substrate, wherein a top surficial portion of the epitaxial layer is removed. A standard clean (SC) process is performed over the substrate, wherein a native oxide layer is formed on an expose surface of the epitaxial layer.

公开(公告)号：US10043888B2

公开(公告)日：2018-08-07

申请号：US15391048

申请日：2016-12-27

申请人： UNITED MICROELECTRONICS CORP.

发明人： Yi-Hui Lin ,  Keng-Jen Lin ,  Yu-Ren Wang

IPC分类号： H01L29/66 ,  H01L21/762 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/3213 ,  H01L29/78 ,  H01L21/8234

CPC分类号： H01L29/66545 ,  H01L21/32134 ,  H01L21/76224 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/66795 ,  H01L29/785

摘要： A method for forming a semiconductor structure includes the following steps. First, a preliminary structure is provided. The preliminary structure includes a substrate and a plurality of fins formed on the substrate. Then, a first polysilicon layer is formed on the substrate. The first polysilicon layer covers at least portions of the fins. An amorphous silicon layer is formed on the first polysilicon layer.

公开(公告)号：US09685319B2

公开(公告)日：2017-06-20

申请号：US14805639

申请日：2015-07-22

申请人： UNITED MICROELECTRONICS CORP.

发明人： Ping-Wei Huang ,  Keng-Jen Lin ,  Yi-Hui Lin ,  Yu-Ren Wang

IPC分类号： H01L29/06 ,  H01L21/02 ,  H01L21/3205 ,  H01L29/78

CPC分类号： H01L21/76224 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/32055 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66795 ,  H01L29/785

摘要： A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.

公开(公告)号：US09418853B1

公开(公告)日：2016-08-16

申请号：US14692736

申请日：2015-04-21

申请人： UNITED MICROELECTRONICS CORP.

发明人： Shao-Wei Wang ,  Keng-Jen Lin ,  Yu-Tung Hsiao ,  Shu-Ming Yeh

IPC分类号： H01L21/3205 ,  H01L21/28 ,  H01L29/51

CPC分类号： H01L21/28185 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/66795

摘要： The present invention provides a method for forming a stacked layer structure, including: first, a recess is provided, next, an oxide layer is formed in the recess, where the oxide layer has a thickness T1, a high-k layer is formed on the oxide layer, a barrier layer is formed on the high-k layer, a silicon layer is then formed on the barrier layer, afterwards, an annealing process is performed on the silicon layer, so as to form an oxygen-containing layer between the silicon layer and the barrier layer, where the oxide layer has a thickness T2 after the annealing process is performed, and satisfies the relationship: (T2−T1)/T1≦0.05, and the silicon layer and the oxygen-containing layer are removed.

摘要翻译： 本发明提供一种层叠结构体的形成方法，其特征在于，首先，设置凹部，在所述凹部形成有氧化层，其中氧化物层的厚度为T1，高k层形成在 氧化物层，在高k层上形成阻挡层，然后在阻挡层上形成硅层，然后在硅层上进行退火处理，以在其之间形成含氧层 硅层和阻挡层，其中氧化物层在退火处理之后具有厚度T2，并且满足关系：（T2-T1）/T1≤0.05，并且去除硅层和含氧层。

公开(公告)号：US20160233092A1

公开(公告)日：2016-08-11

申请号：US14619085

申请日：2015-02-11

申请人： UNITED MICROELECTRONICS CORP.

发明人： Keng-Jen Lin ,  Chien-Liang Lin ,  Yu-Ren Wang ,  Neng-Hui Yang

IPC分类号： H01L21/28 ,  H01L21/285

CPC分类号： H01L29/66545 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/3221 ,  H01L29/4966 ,  H01L29/517

摘要： A gate forming process includes the following steps. A gate dielectric layer is formed on a substrate. A barrier layer is formed on the gate dielectric layer. A silicon seed layer and a silicon layer are sequentially and directly formed on the barrier layer, wherein the silicon seed layer and the silicon layer are formed by different precursors.

摘要翻译： 门形成工艺包括以下步骤。 在基板上形成栅极电介质层。 在栅介质层上形成阻挡层。 硅晶种层和硅层依次直接形成在阻挡层上，其中硅晶种层和硅层由不同的前体形成。

公开(公告)号：US20150140780A1

公开(公告)日：2015-05-21

申请号：US14085811

申请日：2013-11-21

申请人： UNITED MICROELECTRONICS CORP.

发明人： Keng-Jen Lin ,  Yu-Ren Wang ,  Chien-Liang Lin ,  Tsuo-Wen Lu ,  Wei-Jen Chen ,  Chih-Chung Chen

IPC分类号： H01L21/762 ,  H01L21/02

CPC分类号： H01L21/76237 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/32105 ,  H01L21/76205 ,  H01L21/76224

摘要： A method for fabricating shallow trench isolation structure is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a trench in the substrate; (c) forming a silicon layer in the trench; and (d) performing an oxidation process to partially transform a surface of the silicon layer into an oxide layer.

摘要翻译： 公开了一种用于制造浅沟槽隔离结构的方法。 该方法包括以下步骤：（a）提供衬底; （b）在衬底中形成沟槽; （c）在沟槽中形成硅层; 和（d）进行氧化处理以将硅层的表面部分地转变为氧化物层。

公开(公告)号：US20220069127A1

公开(公告)日：2022-03-03

申请号：US17033897

申请日：2020-09-27

申请人： UNITED MICROELECTRONICS CORP.

发明人： Chun-Yu Chen ,  Bo-Lin Huang ,  Jhong-Yi Huang ,  Keng-Jen Lin ,  Yu-Shu Lin

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L29/16

摘要： A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming recesses adjacent to two sides of the gate structure, forming a buffer layer in the recesses, forming a first linear bulk layer on the buffer layer, forming a second linear bulk layer on the first linear bulk layer, forming a bulk layer on the second linear bulk layer, and forming a cap layer on the bulk layer.

公开(公告)号：US20180182862A1

公开(公告)日：2018-06-28

申请号：US15391048

申请日：2016-12-27

申请人： UNITED MICROELECTRONICS CORP.

发明人： Yi-Hui Lin ,  Keng-Jen Lin ,  Yu-Ren Wang

IPC分类号： H01L29/66 ,  H01L21/762 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/3213

CPC分类号： H01L29/66545 ,  H01L21/32055 ,  H01L21/321 ,  H01L21/32135 ,  H01L21/76224 ,  H01L21/823481 ,  H01L29/66795 ,  H01L29/785

摘要： A method for forming a semiconductor structure includes the following steps. First, a preliminary structure is provided. The preliminary structure includes a substrate and a plurality of fins formed on the substrate. Then, a first polysilicon layer is formed on the substrate. The first polysilicon layer covers at least portions of the fins. An amorphous silicon layer is formed on the first polysilicon layer.

公开(公告)号：US09793174B1

公开(公告)日：2017-10-17

申请号：US15270000

申请日：2016-09-20

申请人： UNITED MICROELECTRONICS CORP.

发明人： Ping-Wei Huang ,  Yu-Ren Wang ,  Keng-Jen Lin ,  Shu-Ming Yeh

IPC分类号： H01L27/12 ,  H01L27/088 ,  H01L21/84 ,  H01L21/762 ,  H01L29/78

CPC分类号： H01L21/845 ,  H01L21/76224 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7853

摘要： A fin field effect transistor (FinFET) on a silicon-on-insulator and method of forming the same are provided in the present invention. The FinFET includes first fin structure, second fin structure and an insulating layer. The first fin structure and the second fin structure are disposed on a substrate. The insulating layer covers the first fin structure and the second fin structure and exposes a first portion of the first fin structure and a second portion of the second fin structure. The first fin structure has a first height and the second fin structure has a second height different from the first height, and a top surface of the first fin structure and a top surface of the second fin structure are at different levels.

公开(公告)号：US20170243780A1

公开(公告)日：2017-08-24

申请号：US15590114

申请日：2017-05-09

申请人： UNITED MICROELECTRONICS CORP.

发明人： Ping-Wei Huang ,  Keng-Jen Lin ,  Yi-Hui Lin ,  Yu-Ren Wang

IPC分类号： H01L21/762

CPC分类号： H01L21/76224 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/32055 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66795 ,  H01L29/785

摘要： A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.