Invention Application
- Patent Title: METHOD FOR MEASURING SEMICONDUCTOR DEVICE
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Application No.: US15855520Application Date: 2017-12-27
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Publication No.: US20180202942A1Publication Date: 2018-07-19
- Inventor: Hyo Hyeong KANG , Kang Woong KO , Sung Yoon RYU , Gil Woo SONG , Jae Hyung AHN , Chul Hyung YOO , Kyoung Hwan LEE , Sung Ho JANG , Yong Ju JEON , Hyoung Jo JEON
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Priority: KR10-2016-0180918 20161228
- Main IPC: G01N21/95
- IPC: G01N21/95 ; H01L21/66 ; H01L21/67

Abstract:
A method for measuring a semiconductor device is provided. A method for measuring a semiconductor device includes defining an interest area and an acceptable area in a chip area on a wafer; performing a first measurement of the chip area with a spectral imaging device to acquire spectrum data of the chip area; assuming the distribution of the spectrum data of a first pixel in the acceptable area is a normal distribution; calculating a distance from a central point on the normal distribution to second pixels in the interest area; selecting a position of a second pixel having a distance from the central point on the normal distribution greater than a predetermined range, among the second pixels, as a candidate position; and performing a second measurement of the candidate position.
Public/Granted literature
- US10551326B2 Method for measuring semiconductor device Public/Granted day:2020-02-04
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