公开(公告)号：US20180202942A1

公开(公告)日：2018-07-19

申请号：US15855520

申请日：2017-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Hyeong KANG ,  Kang Woong KO ,  Sung Yoon RYU ,  Gil Woo SONG ,  Jae Hyung AHN ,  Chul Hyung YOO ,  Kyoung Hwan LEE ,  Sung Ho JANG ,  Yong Ju JEON ,  Hyoung Jo JEON

IPC: G01N21/95 ,  H01L21/66 ,  H01L21/67

CPC classification number: G01N21/9501 ,  G01N21/31 ,  G01N21/95607 ,  H01L21/67288 ,  H01L22/12 ,  H01L22/20

Abstract: A method for measuring a semiconductor device is provided. A method for measuring a semiconductor device includes defining an interest area and an acceptable area in a chip area on a wafer; performing a first measurement of the chip area with a spectral imaging device to acquire spectrum data of the chip area; assuming the distribution of the spectrum data of a first pixel in the acceptable area is a normal distribution; calculating a distance from a central point on the normal distribution to second pixels in the interest area; selecting a position of a second pixel having a distance from the central point on the normal distribution greater than a predetermined range, among the second pixels, as a candidate position; and performing a second measurement of the candidate position.