A semiconductor device and a method of manufacturing the same are provided so as to suppress an increase in the forward voltage of a first diode even if a driving signal is inputted to the gate electrode of an insulating gate bipolar transistor. An IGBT has a p-type body region. An anode region of the first diode has the same impurity region as the p-type body region of the IGBT. An anode region of a second diode is surrounded by an emitter groove and thus the anode region is separated from the p-type body region of the IGBT by the emitter groove.