发明申请
- 专利标题: MANUFACTURING APPARATUS AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
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申请号: US15780303申请日: 2016-11-22
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公开(公告)号: US20180355501A1公开(公告)日: 2018-12-13
- 发明人: Tomohisa Hoshino , Masato Hamada
- 申请人: Tokyo Electron Limited
- 优先权: JP2015-236353 20151203
- 国际申请: PCT/JP2016/084655 WO 20161122
- 主分类号: C25D5/18
- IPC分类号: C25D5/18 ; C25D21/12 ; C25D7/12 ; H01L21/288 ; C25D17/10 ; C25D17/00
摘要:
A manufacturing apparatus for a semiconductor device includes a substrate holding unit configured to hold a substrate; a processing liquid supply unit configured to supply a processing liquid onto the substrate held by the substrate holding unit; an electrolytic processing unit disposed to face the substrate holding unit and configured to perform an electrolytic processing on the substrate held by the substrate holding unit; and a terminal configured to apply a voltage to the substrate. The electrolytic processing unit includes a direct electrode configured to be brought into contact with the processing liquid supplied onto the substrate to apply a voltage with respect to the substrate; and an indirect electrode configured to form an electric field in the processing liquid supplied onto the substrate.
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