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公开(公告)号:US10903081B2
公开(公告)日:2021-01-26
申请号:US15857774
申请日:2017-12-29
发明人: Tomohisa Hoshino , Keiichi Fujita , Masato Hamada
IPC分类号: C23C18/16 , C23C18/18 , C23C18/40 , H01L21/288 , H01L21/768 , C25D7/12 , H01L21/3205
摘要: A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.
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公开(公告)号:US10354915B2
公开(公告)日:2019-07-16
申请号:US15077988
申请日:2016-03-23
IPC分类号: B05D3/12 , H01L21/70 , H01L21/768 , H01L21/67 , C23C18/18 , H01L21/288 , B05D1/00 , C23C18/16 , C23C18/32 , C23C18/38 , C23C18/50
摘要: An adhesion layer formed of a thin film can be formed on a surface of a substrate. An adhesion layer forming method of forming the adhesion layer on the substrate includes supplying a coupling agent onto the substrate 2 while rotating the substrate 2. The substrate 2 is rotated at a low speed equal to or less than 300 rpm and the coupling agent diluted with IPA is supplied onto the substrate 2.
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公开(公告)号:US20230096305A1
公开(公告)日:2023-03-30
申请号:US17908660
申请日:2021-02-17
发明人: Masato Hamada , Masami Akimoto , Masatoshi Shiraishi , Kazuyuki Goto , Satoshi Kaneko , Kazuki Motomatsu
摘要: A plating apparatus 1 includes a substrate holder 10, a first electrode, a second electrode and a voltage applying unit 30. The substrate holder 10 is configured to hold a substrate. The first electrode is electrically connected to the substrate. The second electrode is configured to scan with respect to a front surface of the substrate. The voltage applying unit 30 is configured to apply a voltage between the first electrode and the second electrode. A first discharge opening 23 configured to discharge a plating liquid L1 and a second discharge opening 24 configured to discharge a cleaning liquid L2 are formed in a bottom surface 22a of the second electrode.
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公开(公告)号:US11427921B2
公开(公告)日:2022-08-30
申请号:US16481939
申请日:2018-01-18
摘要: An electrolytic treatment apparatus 1 (1A) configured to perform an electrolytic treatment on a target substrate includes a substrate holder 10 and an electrolytic processor 20. The substrate holder 10 includes an insulating holding body 11 configured to hold the target substrate and an indirect negative electrode 12 disposed within the holding body 11. A negative voltage is applied to the indirect negative electrode 12. The electrolytic processor 20 is disposed to face the substrate holder 10 and configured to apply a voltage to the target substrate and an electrolyte in contact with the target substrate.
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公开(公告)号:US20180355501A1
公开(公告)日:2018-12-13
申请号:US15780303
申请日:2016-11-22
发明人: Tomohisa Hoshino , Masato Hamada
CPC分类号: C25D5/18 , C25D5/00 , C25D7/12 , C25D17/005 , C25D17/10 , C25D21/12 , H01L21/288
摘要: A manufacturing apparatus for a semiconductor device includes a substrate holding unit configured to hold a substrate; a processing liquid supply unit configured to supply a processing liquid onto the substrate held by the substrate holding unit; an electrolytic processing unit disposed to face the substrate holding unit and configured to perform an electrolytic processing on the substrate held by the substrate holding unit; and a terminal configured to apply a voltage to the substrate. The electrolytic processing unit includes a direct electrode configured to be brought into contact with the processing liquid supplied onto the substrate to apply a voltage with respect to the substrate; and an indirect electrode configured to form an electric field in the processing liquid supplied onto the substrate.
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公开(公告)号:US20180122641A1
公开(公告)日:2018-05-03
申请号:US15857774
申请日:2017-12-29
发明人: Tomohisa Hoshino , Keiichi Fujita , Masato Hamada
IPC分类号: H01L21/288 , H01L21/768 , C23C18/16 , H01L21/3205
CPC分类号: H01L21/288 , C23C18/1619 , C23C18/1633 , C23C18/1653 , C23C18/1675 , C23C18/1696 , C23C18/1879 , C23C18/40 , C25D7/123 , H01L21/32051 , H01L21/76873 , H01L21/76874 , H01L21/76898
摘要: A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.
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公开(公告)号:US11542627B2
公开(公告)日:2023-01-03
申请号:US16330812
申请日:2017-09-11
发明人: Tomohisa Hoshino , Masato Hamada
IPC分类号: C25D17/12 , H01L21/66 , H01L21/288 , C25D17/00 , C25D21/12
摘要: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate includes a base body having a flat plate shape; an electrode provided at the base body; three or more terminals provided at the base body, each having elasticity and configured to be brought into contact with a peripheral portion of the processing target substrate; and a detecting unit configured to electrically detect a contact of at least one of the terminals with the processing target substrate.
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公开(公告)号:US11427920B2
公开(公告)日:2022-08-30
申请号:US16330805
申请日:2017-09-07
IPC分类号: C25D5/00 , C25D5/02 , C25D17/00 , C25D7/12 , C25D5/04 , C25D17/12 , C25D17/06 , C25D21/12 , C25D15/02 , C25D5/08 , C25D21/04
摘要: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. An irregularity pattern is formed on a front surface of the electrolytic processing jig at a processing target substrate side.
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公开(公告)号:US20190218682A1
公开(公告)日:2019-07-18
申请号:US16330812
申请日:2017-09-11
发明人: Tomohisa Hoshino , Masato Hamada
IPC分类号: C25D17/12 , C25D17/00 , H01L21/288 , H01L21/66
CPC分类号: C25D17/12 , C25D17/001 , C25D21/12 , H01L21/2885 , H01L22/10
摘要: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate includes a base body having a flat plate shape; an electrode provided at the base body; three or more terminals provided at the base body, each having elasticity and configured to be brought into contact with a peripheral portion of the processing target substrate; and a detecting unit configured to electrically detect a contact of at least one of the terminals with the processing target substrate.
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公开(公告)号:US20170170021A1
公开(公告)日:2017-06-15
申请号:US15373724
申请日:2016-12-09
发明人: Tomohisa Hoshino , Keiichi Fujita , Masato Hamada
IPC分类号: H01L21/288 , H01L21/768 , H01L21/3205 , C23C18/16
CPC分类号: H01L21/288 , C23C18/1619 , C23C18/1633 , C23C18/1653 , C23C18/1675 , C23C18/1696 , C23C18/1879 , C23C18/40 , C25D7/123 , H01L21/32051 , H01L21/76873 , H01L21/76874 , H01L21/76898
摘要: In a substrate processing apparatus 1, a plating unit 4 includes a catalyst solution supply unit 43a and a plating liquid supply unit 45. By supplying, from the catalyst solution supply unit 43a onto a substrate W1 having an impurity-doped polysilicon film 90 containing a high concentration of impurities on a surface thereof, an alkaline catalyst solution L1 containing a complex of a palladium ion and a monocyclic 5- or 6-membered aromatic or aliphatic heterocyclic compound having one or two nitrogen atoms as a heteroatom, a catalyst layer 91 is formed on a surface of the impurity-doped polysilicon film 90 of the substrate W1. After the catalyst solution L1 is supplied, an electroless plating layer 92 is formed on the catalyst layer 91 formed on a substrate W2 by supplying a plating liquid M1 from the plating liquid supply unit 45 onto the substrate W2.
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