Invention Application
- Patent Title: Method and Apparatus for Void Free SiN Gapfill
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Application No.: US15625797Application Date: 2017-06-16
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Publication No.: US20180363133A1Publication Date: 2018-12-20
- Inventor: Ranga Rao Arnepalli , Robert Jan Visser , Pramit Manna , Abhijit Basu Mallick , Prerna Goradia
- Applicant: Applied Materials, Inc.
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/458 ; C23C16/46 ; C23C16/52 ; H01L21/768 ; H01L21/762
Abstract:
Methods for filling a substrate feature with a seamless silicon nitride gapfill through a radical based hot wire chemical vapor deposition process are described. Also described is an apparatus for performing the radical based hot wire chemical vapor deposition of the silicon nitride gapfill.
Information query
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