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公开(公告)号:US12137601B2
公开(公告)日:2024-11-05
申请号:US18207549
申请日:2023-06-08
Applicant: Applied Materials, Inc.
Inventor: Yeishin Tung , Byung Sung Kwak , Robert Jan Visser , Gangadhar Banappanavar , Dinesh Kabra
Abstract: An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.
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公开(公告)号:US11856833B2
公开(公告)日:2023-12-26
申请号:US17152688
申请日:2021-01-19
Applicant: Applied Materials, Inc.
Inventor: Yeishin Tung , Byung Sung Kwak , Robert Jan Visser , Guoheng Zhao , Todd J. Egan , Dinesh Kabra , Gangadhar Banappanavar
IPC: H01L51/56 , H10K71/00 , C23C14/56 , C23C14/24 , C23C14/50 , C23C14/54 , C23C14/12 , H10K71/70 , H10K71/16
CPC classification number: H10K71/00 , C23C14/12 , C23C14/24 , C23C14/50 , C23C14/54 , C23C14/568 , H10K71/164 , H10K71/70
Abstract: An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.
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公开(公告)号:US11846836B2
公开(公告)日:2023-12-19
申请号:US17306853
申请日:2021-05-03
Applicant: Applied Materials, Inc.
Inventor: Russell Chin Yee Teo , Ludovic Godet , Nir Yahav , Robert Jan Visser
Abstract: An electro-optical waveguide modulator device includes a seed layer on a substrate, the seed layer having a first crystallographic plane aligned with a surface of the seed layer, an electro-optical channel extending in a first direction on the seed layer and having a second crystallographic plane aligned with the surface of the seed layer, an insulator layer on both sides of the electro-optical channel on the substrate in a second direction perpendicular to the first direction, an electrode barrier layer on the electro-optical channel and the insulator layer, and one or more of electrodes extending in the second direction. The seed layer and the insulator layer each comprise material having a refractive index that is lower than the electro-optical channel.
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公开(公告)号:US20230309420A1
公开(公告)日:2023-09-28
申请号:US18315459
申请日:2023-05-10
Applicant: Applied Materials, Inc.
Inventor: Zihao Yang , Mingwei Zhu , Nag B. Patibandla , Nir Yahav , Robert Jan Visser , Adi de la Zerda
CPC classification number: H10N60/85 , G02B6/107 , G01J1/44 , G01J2001/442
Abstract: A superconducting nanowire single photon detector (SNSPD) device includes a substrate having a top surface, an optical waveguide on the top surface of the substrate to receive light propagating substantially parallel to the top surface of the substrate, a seed layer of metal nitride on the optical waveguide, and a superconductive wire on the seed layer. The superconductive wire is a metal nitride different from the metal nitride of the seed layer and is optically coupled to the optical waveguide.
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公开(公告)号:US20230263075A1
公开(公告)日:2023-08-17
申请号:US17898880
申请日:2022-08-30
Applicant: Applied Materials, Inc.
Inventor: Zihao Yang , Mingwei Zhu , Lan Yu , Zhebo Chen , Robert Jan Visser , Nag Patibandla
CPC classification number: H01L39/2493 , G06N10/40 , H01L39/025
Abstract: Exemplary methods of fabricating high quality quantum computing components are described. The methods include removing native oxide from a deposition surface of a silicon substrate in a cleaning chamber of a processing system, and transferring the silicon substrate under vacuum to a deposition chamber of the processing system. The methods further include depositing an aluminum layer on the deposition surface of the silicon substrate in the deposition chamber, where an interface between the aluminum layer and the deposition surface of the silicon substrate is oxygen free.
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公开(公告)号:US20220267904A1
公开(公告)日:2022-08-25
申请号:US17735257
申请日:2022-05-03
Applicant: Applied Materials, Inc.
Inventor: Geetika Bajaj , Darshan Thakare , Prerna Sonthalia Goradia , Robert Jan Visser , Yixiong Yang , Jacqueline S. Wrench , Srinivas Gandikota
Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C).
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公开(公告)号:US11359282B2
公开(公告)日:2022-06-14
申请号:US16991430
申请日:2020-08-12
Applicant: Applied Materials, Inc.
Inventor: Geetika Bajaj , Darshan Thakare , Prerna Goradia , Robert Jan Visser , Yixiong Yang , Jacqueline S. Wrench , Srinivas Gandikota
Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C).
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公开(公告)号:US11355724B2
公开(公告)日:2022-06-07
申请号:US16685944
申请日:2019-11-15
Applicant: Applied Materials, Inc
Inventor: Gang Yu , Chung-Chia Chen , Wan-Yu Lin , Hyunsung Bang , Lisong Xu , Byung Sung Kwak , Robert Jan Visser
Abstract: An organic light-emitting diode (OLED) structure includes a stack of OLED layers; a light extraction layer (LEL) comprising a UV-cured ink; and a UV blocking layer between the LEL and the stack of OLED layers.
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公开(公告)号:US20220130663A1
公开(公告)日:2022-04-28
申请号:US17563024
申请日:2021-12-27
Applicant: Applied Materials, Inc.
Inventor: Tapash Chakraborty , Robert Jan Visser , Prerna Sonthalia Goradia
IPC: H01L21/02 , H01L21/3105 , C23C16/455
Abstract: Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.
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公开(公告)号:US20220064474A1
公开(公告)日:2022-03-03
申请号:US17004114
申请日:2020-08-27
Applicant: Applied Materials, Inc.
Inventor: Srobona SEN , Tapashree Roy , Prerna Sonthalia Goradia , Robert Jan Visser
IPC: C09D127/18 , C09D183/08
Abstract: Embodiments described herein relate to flat optical devices and encapsulation materials for flat optical devices. One or more embodiments include a substrate having a first arrangement of a first plurality of pillars formed thereon. The first arrangement of the first plurality of pillars includes pillars having a height h and a lateral distance d. The first arrangement of the first plurality of pillars includes a gap g corresponding to a distance between adjacent pillars of the first plurality of pillars. An aspect ratio of the gap g to the height h is between about 1:1 and about 1:20. A first adhesion-promoting material is disposed over the first arrangement of the first plurality of pillars. A first encapsulation layer is disposed over the first adhesion-promoting material. The first encapsulation layer fills the gap g between adjacent pillars of the first plurality of pillars. The first encapsulation layer includes a fluoropolymer.
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