公开(公告)号：US12004337B2

公开(公告)日：2024-06-04

申请号：US17985065

申请日：2022-11-10

Applicant: Applied Materials, Inc.

Inventor： Gayatri Natu ,  Geetika Bajaj ,  Prerna Goradia ,  Darshan Thakare ,  David Fenwick ,  XiaoMing He ,  Sanni Seppaelae ,  Jennifer Sun ,  Rajkumar Thanu ,  Jeff Hudgens ,  Karuppasamy Muthukamatchy ,  Arun Dhayalan

IPC: H05K9/00 ,  H01J37/20 ,  H01J37/32 ,  H01L21/687 ,  H05F1/02

CPC classification number: H05K9/0064 ,  H01J37/20 ,  H01J37/32477 ,  H01J37/32495 ,  H01L21/68707 ,  H01L21/68757 ,  H05F1/02

Abstract: Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.

公开(公告)号：US20220071023A1

公开(公告)日：2022-03-03

申请号：US17005954

申请日：2020-08-28

Applicant: Applied Materials, Inc.

Inventor： Tapash Chakraborty ,  Steven Verhaverbeke ,  Han-Wen Chen ,  Chintan Buch ,  Prerna Goradia ,  Giback Park ,  Kyuil Cho

IPC: H05K3/38 ,  H05K3/00 ,  B32B7/12 ,  B32B15/08

Abstract: Methods for forming circuit boards and circuit boards using an adhesion layer are described. A substrate with two surfaces is exposed to a bifunctional organic compound to form an adhesion layer on the first substrate surface. A resin layer is then deposited on the adhesion layer and the exposed substrate surfaces. Portions of the resin layer may be removed to expose metal pads for contacts.

公开(公告)号：US20180363133A1

公开(公告)日：2018-12-20

申请号：US15625797

申请日：2017-06-16

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Robert Jan Visser ,  Pramit Manna ,  Abhijit Basu Mallick ,  Prerna Goradia

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  H01L21/768 ,  H01L21/762

Abstract: Methods for filling a substrate feature with a seamless silicon nitride gapfill through a radical based hot wire chemical vapor deposition process are described. Also described is an apparatus for performing the radical based hot wire chemical vapor deposition of the silicon nitride gapfill.

公开(公告)号：US20180277384A1

公开(公告)日：2018-09-27

申请号：US15467866

申请日：2017-03-23

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Prerna Goradia ,  Prayudi Lianto ,  Jie Zeng ,  Arvind Sundarrajan ,  Robert Jan Visser ,  Guan Huei See

IPC: H01L21/3105 ,  H01L21/321 ,  H01L21/3205 ,  H01L21/67 ,  C09G1/02 ,  C09K3/14

CPC classification number: H01L21/31058 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/32051

Abstract: A slurry for chemical mechanical planarization includes water, 1-3 wt. % of abrasive particles having an average diameter of at least 10 nm and less than 100 nm and an outer surface of ceria, and ½-3 wt. % of at least one amine.

公开(公告)号：US09673042B2

公开(公告)日：2017-06-06

申请号：US14842806

申请日：2015-09-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Robert Jan Visser ,  Ranga Rao Arnepalli ,  Prerna Goradia

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/24 ,  C23C16/56 ,  H01L21/768

CPC classification number: H01L21/02271 ,  C23C16/0227 ,  C23C16/0236 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/56 ,  H01L21/02043 ,  H01L21/02068 ,  H01L21/02118 ,  H01L21/02277 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76883

Abstract: A method of processing includes: providing a substrate having a contaminant material disposed on the copper surface to a substrate support within a hot wire chemical vapor deposition (HWCVD) chamber; providing hydrogen (H2) gas to the HWCVD chamber; heating one or more filaments disposed in the HWCVD chamber to a temperature sufficient to dissociate the hydrogen (H2) gas; exposing the substrate to the dissociated hydrogen (H2) gas to remove at least some of the contaminant material from the copper surface; cooling the one or more filaments to room temperature; exposing the substrate in the HWCVD chamber to one or more chemical precursors to deposit a self-assembled monolayer atop the copper surface; and depositing a second layer atop the substrate.

公开(公告)号：US11639547B2

公开(公告)日：2023-05-02

申请号：US16401467

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Prerna Goradia ,  Jennifer Y. Sun ,  Xiaowei Wu ,  Geetika Bajaj ,  Atul Chaudhari ,  Ankur Kadam

IPC: C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/18 ,  C23C16/27 ,  C23C16/40

Abstract: Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.

公开(公告)号：US10515927B2

公开(公告)日：2019-12-24

申请号：US15634012

申请日：2017-06-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Prayudi Lianto ,  Guan Huei See ,  Arvind Sundarrajan ,  Ranga Rao Arnepalli ,  Prerna Goradia

IPC: H01L21/48 ,  H01L23/00 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/56

Abstract: A fan-out process using chemical mechanical planarization (CMP) reduces the step-height between a semiconductor die and the surrounding overmolding of a reconstituted wafer. The reconstituted wafer is formed by overmolding a back side of at least one die that is placed with an active side facing down. The reconstituted wafer is then oriented to expose the die and the active side. A polymer layer is then formed over the reconstituted wafer. A CMP process then removes a portion of the polymer layer until a certain thickness above the die surface is obtained, reducing the step-height between the polymer layer on top of the die surface and the polymer layer on the adjacent mold compound surface. The CMP process can also be performed after a subsequent redistribution layer is formed on the reconstituted wafer.

公开(公告)号：US20170298252A1

公开(公告)日：2017-10-19

申请号：US15508359

申请日：2015-10-09

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Robert Jan Visser ,  Rajeev Bajaj ,  Darshan Thakare ,  Prerna Goradia ,  Uday Mahajan ,  Abdul Wahab Mohammed

IPC: C09G1/02 ,  H01L21/3105 ,  C09K3/14

CPC classification number: C09G1/02 ,  C01B33/149 ,  C01F17/0043 ,  C01P2002/72 ,  C01P2004/04 ,  C01P2004/52 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2004/84 ,  C01P2004/88 ,  C09K3/1436 ,  C09K3/1445 ,  C09K3/1463 ,  H01L21/31053

Abstract: A slurry for chemical mechanical planarization includes a surfactant, and abrasive particles having an average diameter between 20 and 30 nm and an outer surface of ceria. The abrasive particles are formed using a hydrothermal synthesis process. The abrasive particles are between 0.1 and 3 wt % of the slurry.

公开(公告)号：US20240284650A1

公开(公告)日：2024-08-22

申请号：US18648278

申请日：2024-04-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Gayatri Natu ,  Geetika Bajaj ,  Prerna Goradia ,  Darshan Thakare ,  David Fenwick ,  XiaoMing He ,  Sanni Seppaelae ,  Jennifer Sun ,  Rajkumar Thanu ,  Jeff Hudgens ,  Karuppasamy Muthukamatchy ,  Arun Dhayalan

IPC: H05K9/00 ,  H01J37/20 ,  H01J37/32 ,  H01L21/687 ,  H05F1/02

CPC classification number: H05K9/0064 ,  H01J37/20 ,  H01J37/32477 ,  H01J37/32495 ,  H01L21/68707 ,  H01L21/68757 ,  H05F1/02

Abstract: A coated chamber component comprises a chamber component and a coating deposited on a surface of the chamber component, the coating comprising an electrically-dissipative material. The electrically-dissipative material is to provide a dissipative path from the coating to a ground. The coating is uniform, conformal, and has a thickness ranging from about 10 nm to about 900 nm.

公开(公告)号：US20230279541A1

公开(公告)日：2023-09-07

申请号：US18122472

申请日：2023-03-16

Applicant: Applied Materials, Inc.

Inventor： Prerna Goradia ,  Jennifer Y. Sun ,  Xiaowei Wu ,  Geetika Bajaj ,  Atul Chaudhari ,  Ankur Kadam

IPC: C23C16/44 ,  C23C16/18 ,  C23C16/455 ,  H01J37/32 ,  C23C16/27 ,  C23C16/40

CPC classification number: C23C16/4404 ,  C23C16/18 ,  C23C16/45529 ,  H01J37/32477 ,  C23C16/277 ,  C23C16/45544 ,  C23C16/405

Abstract: Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.