- 专利标题: STATE DEPENDENT SENSE CIRCUITS AND SENSE OPERATIONS FOR STORAGE DEVICES
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申请号: US15627947申请日: 2017-06-20
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公开(公告)号: US20180366178A1公开(公告)日: 2018-12-20
- 发明人: Anirudh Amarnath , Tai-Yuan Tseng
- 申请人: SanDisk Technologies LLC
- 申请人地址: US TX Plano
- 专利权人: SanDisk Technologies LLC
- 当前专利权人: SanDisk Technologies LLC
- 当前专利权人地址: US TX Plano
- 主分类号: G11C11/4091
- IPC分类号: G11C11/4091 ; G11C11/4094
摘要:
A circuit includes selected sense circuits configured to be connected to selected bit lines and unselected sense circuits configured to be connected to unselected bit lines during a sense operation. A voltage supply circuit may supply a selected pulse and an unselected pulse to the selected and unselected sense circuits. The selected sense circuits may pass the selected pulse to associated charge-storing circuits, and reject the unselected pulse. The unselected sense circuits may pass the unselected pulse to associated charge-storing circuits, and reject the selected pulse. In addition, voltage-setting circuitry may set sense voltages in the unselected sense circuits to a pre-sense level that matches the pre-sense level of communication voltages in the unselected sense circuits.
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