Invention Grant
- Patent Title: State dependent sense circuits and sense operations for storage devices
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Application No.: US15627947Application Date: 2017-06-20
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Publication No.: US10366739B2Publication Date: 2019-07-30
- Inventor: Anirudh Amarnath , Tai-Yuan Tseng
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Brinks Gilson & Lione
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C11/4091 ; G11C11/4094 ; G11C16/26 ; G11C7/06 ; G11C7/08 ; G11C7/12 ; G11C11/56 ; G11C16/08 ; G11C16/24 ; G11C16/32 ; G11C11/24 ; G11C16/04 ; G11C16/30

Abstract:
A circuit includes selected sense circuits configured to be connected to selected bit lines and unselected sense circuits configured to be connected to unselected bit lines during a sense operation. A voltage supply circuit may supply a selected pulse and an unselected pulse to the selected and unselected sense circuits. The selected sense circuits may pass the selected pulse to associated charge-storing circuits, and reject the unselected pulse. The unselected sense circuits may pass the unselected pulse to associated charge-storing circuits, and reject the selected pulse. In addition, voltage-setting circuitry may set sense voltages in the unselected sense circuits to a pre-sense level that matches the pre-sense level of communication voltages in the unselected sense circuits.
Public/Granted literature
- US20180366178A1 STATE DEPENDENT SENSE CIRCUITS AND SENSE OPERATIONS FOR STORAGE DEVICES Public/Granted day:2018-12-20
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