- 专利标题： MANUFACTURING METHOD OF REDISTRIBUTION LAYER
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申请号： US15626165申请日： 2017-06-18
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公开(公告)号： US20180366344A1公开(公告)日： 2018-12-20
- 发明人: Kun-Yung Huang , Chih-Fu Lung , Shih-Chi Li , Mei-Chen Lee , Chung-Hao Tsai , Chi-Liang Wang
- 申请人： Powertech Technology Inc.
- 申请人地址： TW Hsinchu County
- 专利权人： Powertech Technology Inc.
- 当前专利权人： Powertech Technology Inc.
- 当前专利权人地址： TW Hsinchu County
- 主分类号： H01L21/48
- IPC分类号： H01L21/48
摘要：
A manufacturing method of a redistribution layer is provided. The method includes the following steps. A patterned sacrificial layer is formed on a carrier. An actuate angle is formed between a side wall of the patterned sacrificial layer and the carrier. A first conductive layer is formed. The first conductive layer includes a plurality of first portions formed on the carrier and a plurality of second portions formed on the patterned sacrificial layer. The patterned sacrificial layer and the second portions of the first conductive layer are removed from the carrier. Another manufacturing method of a redistribution layer is also provided.
公开/授权文献
- US10607856B2 Manufacturing method of redistribution layer 公开/授权日：2020-03-31
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