公开(公告)号：US10607856B2

公开(公告)日：2020-03-31

申请号：US15626165

申请日：2017-06-18

申请人： Powertech Technology Inc.

发明人： Kun-Yung Huang ,  Chih-Fu Lung ,  Shih-Chi Li ,  Mei-Chen Lee ,  Chung-Hao Tsai ,  Chi-Liang Wang

IPC分类号： H05K3/02 ,  H01L21/48 ,  H01L21/683

摘要： A manufacturing method of a redistribution layer is provided. The method includes the following steps. A patterned sacrificial layer is formed on a carrier. An actuate angle is formed between a side wall of the patterned sacrificial layer and the carrier. A first conductive layer is formed. The first conductive layer includes a plurality of first portions formed on the carrier and a plurality of second portions formed on the patterned sacrificial layer. The patterned sacrificial layer and the second portions of the first conductive layer are removed from the carrier. Another manufacturing method of a redistribution layer is also provided.

公开(公告)号：US20180366344A1

公开(公告)日：2018-12-20

申请号：US15626165

申请日：2017-06-18

申请人： Powertech Technology Inc.

发明人： Kun-Yung Huang ,  Chih-Fu Lung ,  Shih-Chi Li ,  Mei-Chen Lee ,  Chung-Hao Tsai ,  Chi-Liang Wang

IPC分类号： H01L21/48

摘要： A manufacturing method of a redistribution layer is provided. The method includes the following steps. A patterned sacrificial layer is formed on a carrier. An actuate angle is formed between a side wall of the patterned sacrificial layer and the carrier. A first conductive layer is formed. The first conductive layer includes a plurality of first portions formed on the carrier and a plurality of second portions formed on the patterned sacrificial layer. The patterned sacrificial layer and the second portions of the first conductive layer are removed from the carrier. Another manufacturing method of a redistribution layer is also provided.