Provided are a light emitting transistor and a method for manufacturing the same. The light emitting transistor includes: a channel layer disposed on a substrate; a first lower pattern disposed in the luminescent area and a second lower pattern disposed to be spaced apart from the first lower pattern in the non-luminescent area, which are disposed on the channel layer; a light emitting layer disposed on the first lower pattern; an upper layer disposed on the light emitting layer; a first electrode disposed on the upper layer; an insulating layer disposed between the first lower pattern and the second lower pattern in the non-luminescent area; a second electrode disposed on the insulating layer; and a third electrode disposed on the second lower pattern to concentrate a light emitting diode and a transistor, thereby implementing a microdisplay.