公开(公告)号：US20190013433A1

公开(公告)日：2019-01-10

申请号：US15835379

申请日：2017-12-07

Applicant: LG Display Co., Ltd.

Inventor： JungHan KIM ,  GeeSung CHAE ,  HoCheol KANG ,  Seungyong NAM

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32

Abstract: Provided are a light emitting transistor and a method for manufacturing the same. The light emitting transistor includes: a channel layer disposed on a substrate; a first lower pattern disposed in the luminescent area and a second lower pattern disposed to be spaced apart from the first lower pattern in the non-luminescent area, which are disposed on the channel layer; a light emitting layer disposed on the first lower pattern; an upper layer disposed on the light emitting layer; a first electrode disposed on the upper layer; an insulating layer disposed between the first lower pattern and the second lower pattern in the non-luminescent area; a second electrode disposed on the insulating layer; and a third electrode disposed on the second lower pattern to concentrate a light emitting diode and a transistor, thereby implementing a microdisplay.