Invention Application
- Patent Title: SEMICONDUCTOR LIGHT-EMITTING DEVICE
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Application No.: US15876435Application Date: 2018-01-22
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Publication No.: US20190027649A1Publication Date: 2019-01-24
- Inventor: Ju-heon YOON , Jae-in SIM , Gi-bum KIM , Ha-yeong SON , Young-sub SHIN
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Priority: KR10-2017-0091057 20170718
- Main IPC: H01L33/24
- IPC: H01L33/24 ; H01L33/00 ; H01L33/08 ; H01L33/40 ; H01L33/60 ; H01L21/02 ; H01L25/075

Abstract:
A semiconductor light-emitting device includes a light-emitting structure, a reflective electrode layer, and a transparent cover layer. The light-emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. The reflective electrode layer covers an upper surface of the second semiconductor layer. The transparent cover layer covers an upper surface of the second semiconductor layer on the reflective electrode layer. The transparent cover layer includes a tail portion including a first portion and a second portion. The first portion covers an edge of the reflective electrode layer and a convex upper surface. The second portion is thinner than and extends from the first portion.
Public/Granted literature
- US10340420B2 Semiconductor light-emitting device having a transparent cover layer tail portion Public/Granted day:2019-07-02
Information query
IPC分类: